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A THERMAL MODEL FOR IGBT MODULES AND ITS IMPLEMENTATION IN A REAL TIME SIMULATOR

Luo, Zhaohui (2002) A THERMAL MODEL FOR IGBT MODULES AND ITS IMPLEMENTATION IN A REAL TIME SIMULATOR. Doctoral Dissertation, University of Pittsburgh.

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    Abstract

    As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability and efficient heat-sink design. The aim of this thesis is to build a comprehensive thermal model for the power IGBT modules used in three-phase inverters in order to predict the dynamic junction temperature rise under real operating conditions. The thermal model is developed in two steps: first, the losses are calculated and then the junction temperature is estimated. The real-time simulation environment dictates the requirements for the models: easy implementation on the software platform SIMULINK and fast calculation time. The power losses model, which is based on the look-up table method for calculating the conduction and switching losses, are successfully built and implemented in the real time simulation environment. The power losses equations are derived from the experimental data. Several algorithms are developed to catch every switching event and to solve the synchronization problem in a real-time system. An equivalent RC network model is built to perform the thermal analysis. The parameters of the thermal network are extracted from the junction to case and case to ambient dynamic thermal impedance curves. Two separate approaches are followed in deriving these thermal characteristic curves. The first approach uses the experimental data available while the second approach uses the commercial software package ANSYS. The 3-D simulation results using ANSYS agree well with the experimental data and therefore can be relied upon to extract the parameters of the thermal RC network. The latter is successfully implemented using the transfer function method, and is then built in SIMULINK environment for the use in a real time simulator. The power losses and thermal RC network models are extensively tested in a real time simulator environment. The accuracy of the models is confirmed by comparing their predictions with the experimental data.


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    Item Type: University of Pittsburgh ETD
    ETD Committee:
    ETD Committee TypeCommittee MemberEmailORCID
    Committee ChairEl Nokali, Mahmoudelnokali@engr.pitt.edu
    Committee MemberLanger, Dietrich Wdwl@ee.pitt.edu
    Committee MemberKusic, GeorgeKusic@engr.pitt.edu
    Committee MemberKim, Hong Kookim@ee.pitt.edu
    Committee MemberSmolinski, Patricksmolinski@engr.pitt.edu
    Title: A THERMAL MODEL FOR IGBT MODULES AND ITS IMPLEMENTATION IN A REAL TIME SIMULATOR
    Status: Unpublished
    Abstract: As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability and efficient heat-sink design. The aim of this thesis is to build a comprehensive thermal model for the power IGBT modules used in three-phase inverters in order to predict the dynamic junction temperature rise under real operating conditions. The thermal model is developed in two steps: first, the losses are calculated and then the junction temperature is estimated. The real-time simulation environment dictates the requirements for the models: easy implementation on the software platform SIMULINK and fast calculation time. The power losses model, which is based on the look-up table method for calculating the conduction and switching losses, are successfully built and implemented in the real time simulation environment. The power losses equations are derived from the experimental data. Several algorithms are developed to catch every switching event and to solve the synchronization problem in a real-time system. An equivalent RC network model is built to perform the thermal analysis. The parameters of the thermal network are extracted from the junction to case and case to ambient dynamic thermal impedance curves. Two separate approaches are followed in deriving these thermal characteristic curves. The first approach uses the experimental data available while the second approach uses the commercial software package ANSYS. The 3-D simulation results using ANSYS agree well with the experimental data and therefore can be relied upon to extract the parameters of the thermal RC network. The latter is successfully implemented using the transfer function method, and is then built in SIMULINK environment for the use in a real time simulator. The power losses and thermal RC network models are extensively tested in a real time simulator environment. The accuracy of the models is confirmed by comparing their predictions with the experimental data.
    Date: 20 December 2002
    Date Type: Completion
    Defense Date: 15 October 2002
    Approval Date: 20 December 2002
    Submission Date: 05 December 2002
    Access Restriction: No restriction; The work is available for access worldwide immediately.
    Patent pending: No
    Institution: University of Pittsburgh
    Thesis Type: Doctoral Dissertation
    Refereed: Yes
    Degree: PhD - Doctor of Philosophy
    URN: etd-12052002-135725
    Uncontrolled Keywords: 3-D FEM; IGBT; Power Transistor; Thermal Analysis; Thermal RC network
    Schools and Programs: Swanson School of Engineering > Electrical Engineering
    Date Deposited: 10 Nov 2011 15:08
    Last Modified: 21 May 2012 10:49
    Other ID: http://etd.library.pitt.edu:80/ETD/available/etd-12052002-135725/, etd-12052002-135725

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