Chen, Hsin-Ju
(2012)
Power Losses of Silicon Carbide MOSFET in HVDC Application.
Master's Thesis, University of Pittsburgh.
(Unpublished)
This is the latest version of this item.
Abstract
Silicon carbide devices have advantages of higher blocking voltage, lower conduction loss, and lower low junction operating temperature compared to silicon-based devices. There’s a need for more efficiency, economic and environmental friendly semiconductor devices for voltage source converter based high voltage direct current electric power transmission system application. This thesis compares a high power and high frequency operation of the SiC MOSFET with a conventional silicon IGBT module with similar power ratings in HVDC applications. An overview of the silicon carbide technology, power electronics and converter topology are also included. Two circuits were designed to compare the switching losses of SiC MOSFET with Si IGBT. The commercial SiC MOSFET QJD1210007 (1200V/100A) and Si IGBT CM100TF-24H (1200V/100A) were used in this study. PSCAD and Matlab/Simulink models of the devices were used to analyze the power losses. The models used in simulations are a preliminary evaluation of the device performance. The following studies were carried out: (i) A comparison between PSCAD and Matlab/Simulink simulation results for a push-pull converter, (ii) Switching power loss calculations via Matlab and accurate conduction loss estimation, (iii) and finally an experimental circuit was built to gather physical measurements to compare with the simulation results. The SiC MOSFET analytical was verified by comparing simulation with experimental switching waveforms. Based upon the experimental and analytical results, silicon carbide semiconductor devices have advantages over silicon IGBT and may replace them for HVDC applications. This thesis focuses on the simulation and physical circuit analysis.
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Details
| Item Type: |
University of Pittsburgh ETD
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| Status: |
Unpublished |
| Creators/Authors: |
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| ETD Committee: |
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| Date: |
4 June 2012 |
| Date Type: |
Publication |
| Defense Date: |
28 March 2012 |
| Approval Date: |
4 June 2012 |
| Submission Date: |
3 April 2012 |
| Access Restriction: |
No restriction; Release the ETD for access worldwide immediately. |
| Number of Pages: |
93 |
| Institution: |
University of Pittsburgh |
| Schools and Programs: |
Swanson School of Engineering > Electrical Engineering |
| Degree: |
MS - Master of Science |
| Thesis Type: |
Master's Thesis |
| Refereed: |
Yes |
| Uncontrolled Keywords: |
SiC, MOSFET, switching loss, Semiconductor, PSCAD, Matlab/Simulink, simulation, HVDC application |
| Date Deposited: |
04 Jun 2012 17:17 |
| Last Modified: |
15 Nov 2016 13:57 |
| URI: |
http://d-scholarship.pitt.edu/id/eprint/11741 |
Available Versions of this Item
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Power Losses of Silicon Carbide MOSFET in HVDC Application. (deposited 04 Jun 2012 17:17)
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