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Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface

Shen, TC and Steckel, JA and Jordan, KD (2000) Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface. Surface Science, 446 (3). 211 - 218. ISSN 0039-6028

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Rearrangements of the Si(100)-3×1:H surface induced by an STM tip at a positive sample bias are examined. Emphasis is placed on local 3×1→2×1 restructuring of the surface following the loss of two H atoms. The H-atom desorption yield from monohydride sites of the 3×1 surface and the 3×1→2×1 transition yield induced by electronic excitation are presented. Based on electronic structure calculations, it is estimated that the 3×1→2×1 rearrangement process has overall barriers ranging from 0.1 to 1.6 eV, depending on the sites from which the H atoms are lost. It is proposed that STM-induced vibrational excitation of surface bonds provides the energy for surmounting the rearrangement barriers.


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Item Type: Article
Status: Published
CreatorsEmailPitt UsernameORCID
Shen, TC
Steckel, JA
Jordan, KDjordan@pitt.eduJORDAN
Date: 10 February 2000
Date Type: Publication
Journal or Publication Title: Surface Science
Volume: 446
Number: 3
Page Range: 211 - 218
DOI or Unique Handle: 10.1016/s0039-6028(99)01147-4
Schools and Programs: Dietrich School of Arts and Sciences > Chemistry
Refereed: Yes
ISSN: 0039-6028
Date Deposited: 12 Nov 2012 15:12
Last Modified: 02 Feb 2019 15:56


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