Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface

Shen, TC and Steckel, JA and Jordan, KD (2000) Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface. Surface Science, 446 (3). 211 - 218. ISSN 0039-6028

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Abstract

Rearrangements of the Si(100)-3×1:H surface induced by an STM tip at a positive sample bias are examined. Emphasis is placed on local 3×1→2×1 restructuring of the surface following the loss of two H atoms. The H-atom desorption yield from monohydride sites of the 3×1 surface and the 3×1→2×1 transition yield induced by electronic excitation are presented. Based on electronic structure calculations, it is estimated that the 3×1→2×1 rearrangement process has overall barriers ranging from 0.1 to 1.6 eV, depending on the sites from which the H atoms are lost. It is proposed that STM-induced vibrational excitation of surface bonds provides the energy for surmounting the rearrangement barriers.

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Details

Item Type:	Article
Status:	Published
Creators/Authors:	Creators Email Pitt Username ORCID Shen, TC Steckel, JA Jordan, KD jordan@pitt.edu JORDAN
Date:	10 February 2000
Date Type:	Publication
Journal or Publication Title:	Surface Science
Volume:	446
Number:	3
Page Range:	211 - 218
DOI or Unique Handle:	10.1016/s0039-6028(99)01147-4
Schools and Programs:	Dietrich School of Arts and Sciences > Chemistry
Refereed:	Yes
ISSN:	0039-6028
Date Deposited:	12 Nov 2012 15:12
Last Modified:	02 Feb 2019 15:56
URI:	http://d-scholarship.pitt.edu/id/eprint/16199

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