Bayram, Ismail
(2013)
Reverse Connection of MTJ Device in STT-RAM Cell.
Master's Thesis, University of Pittsburgh.
(Unpublished)
Abstract
STT-RAM technology is an emerging memory technology which is a future replacement for conventional memory technologies. STT-RAM promises fast read-write-access speeds, low power consumption, high density, non-volatility and very long life time. As with any emerging technology, however, STT-RAM has its own set of characteristic disadvantages which must first be overcome before it can be considered a viable replacement for existing solutions, an example of such being its asymmetric behavior during write operations. Currently, reverse connection of the MTJ device in STT-RAM cells is being proposed as a novel solution for compensating for this asymmetric write operation. In this work, two different MTJ devices are examined to determine which one is better suited for use with conventional connection method and which is more convenient to use with the proposed reverse connection method. Thereafter, the results of the study are applied to determine what properties of an MTJ device most heavily influence whether it is best utilized with a reverse connection versus a conventional connection.
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Details
Item Type: |
University of Pittsburgh ETD
|
Status: |
Unpublished |
Creators/Authors: |
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ETD Committee: |
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Date: |
27 June 2013 |
Date Type: |
Publication |
Defense Date: |
1 April 2013 |
Approval Date: |
27 June 2013 |
Submission Date: |
4 April 2013 |
Access Restriction: |
No restriction; Release the ETD for access worldwide immediately. |
Number of Pages: |
50 |
Institution: |
University of Pittsburgh |
Schools and Programs: |
Swanson School of Engineering > Computer Engineering |
Degree: |
MS - Master of Science |
Thesis Type: |
Master's Thesis |
Refereed: |
Yes |
Uncontrolled Keywords: |
spin, transfer, torque, reverse, conventional, connection, memory |
Date Deposited: |
27 Jun 2013 14:37 |
Last Modified: |
15 Nov 2016 14:11 |
URI: |
http://d-scholarship.pitt.edu/id/eprint/18178 |
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