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Characterizing and Modeling Transient Behavior in Power Electronic Circuits with Wide Bandgap Semiconductors and in Maximum Power Point Tracking for Photovoltaic Systems

Khanna, Raghav (2014) Characterizing and Modeling Transient Behavior in Power Electronic Circuits with Wide Bandgap Semiconductors and in Maximum Power Point Tracking for Photovoltaic Systems. Doctoral Dissertation, University of Pittsburgh. (Unpublished)

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This dissertation examines the transient characteristics in next generation power electronic circuits at both the device-level and the systems-level. At the device-level, the effect of the parasitic capacitances on the switching performance of emerging wide bandgap semiconductors (WBG) is evaluated. Equivalent device models based on gallium nitride (GaN) and silicon carbide (SiC) are implemented in SaberRD and MATLAB, and transient switching characteristics are analyzed in great detail. The effects of the parasitic capacitances on detrimental circuit behavior such as “overshoot,” “ringing,” and “false turn-on” are investigated. The modeled results are supplemented and validated with experimental characterization of the devices in various power conversion circuits. The models can be used to aid in the design of next generation WBG devices so that the undesirable transient effects displayed by contemporary versions of these devices can be mitigated.
At the systems-level, the transient overshoot demonstrated by conventional maximum power point tracking algorithms for photovoltaic power conversion systems is investigated. An adaptive controller is implemented so that the operating point can converge to the optimal power point rapidly with minimal overshoot. This new controller overcomes the parasitic components inherent to the power converter which limit its ability to deliver maximum power rapidly. It will be shown that with the new controller, the maximum power point is attainable in 4 milliseconds.
The work accomplished in this dissertation lays a foundation for power electronic engineers to integrate semiconductor device theory with control theory to optimize the performance of next generation power conversion systems.


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Item Type: University of Pittsburgh ETD
Status: Unpublished
CreatorsEmailPitt UsernameORCID
Khanna,, ragskhanna@gmail.comRAK23
ETD Committee:
TitleMemberEmail AddressPitt UsernameORCID
Committee ChairStanchina, Williamwes25@pitt.eduWES25
Committee MemberReed, Gregorygfr3@pitt.eduGFR3
Committee MemberMao, Zhi-Hongzhm4@pitt.eduZHM4
Committee MemberMcdermott, Tomtem42@pitt.eduTEM42
Committee MemberLi, Guangyonggul6@pitt.eduGUL6
Committee MemberClark, Williamwclark@pitt.eduWCLARK
Date: 16 June 2014
Date Type: Publication
Defense Date: 17 March 2014
Approval Date: 16 June 2014
Submission Date: 25 March 2014
Access Restriction: No restriction; Release the ETD for access worldwide immediately.
Number of Pages: 193
Institution: University of Pittsburgh
Schools and Programs: Swanson School of Engineering > Electrical Engineering
Degree: PhD - Doctor of Philosophy
Thesis Type: Doctoral Dissertation
Refereed: Yes
Uncontrolled Keywords: Power electroncs, wide bandgap semiconductors, maximum power point tracking, transients, switching losses
Date Deposited: 16 Jun 2014 19:37
Last Modified: 15 Nov 2016 14:18


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