Role of strain in the blistering of hydrogen-implanted silicon

Lee, JK and Lin, Y and Jia, QX and Höchbauer, T and Jung, HS and Shao, L and Misra, A and Nastasi, M (2006) Role of strain in the blistering of hydrogen-implanted silicon. Applied Physics Letters, 89 (10). ISSN 0003-6951

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Abstract

The authors investigated the physical mechanisms underlying blistering in hydrogen-implanted silicon by examining the correlation between implantation induced damage, strain distribution, and vacancy diffusion. Using Rutherford backscattering, scanning electron microscopy, and atomic force microscopy, they found that the depth of blisters coincided with that of maximum implantation damage. A model based on experimental results is presented showing the effect of tensile strain on the local diffusion of vacancies toward the depth of maximum damage, which promotes the nucleation and growth of platelets and ultimately blisters. © 2006 American Institute of Physics.

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Details

Item Type:	Article
Status:	Published
Creators/Authors:	Creators Email Pitt Username ORCID Lee, JK jul37@pitt.edu JUL37 0000-0002-7778-7679 Lin, Y Jia, QX Höchbauer, T Jung, HS Shao, L Misra, A Nastasi, M
Date:	15 September 2006
Date Type:	Publication
Journal or Publication Title:	Applied Physics Letters
Volume:	89
Number:	10
DOI or Unique Handle:	10.1063/1.2345245
Schools and Programs:	Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed:	Yes
ISSN:	0003-6951
Date Deposited:	14 May 2014 16:39
Last Modified:	05 Feb 2019 19:55
URI:	http://d-scholarship.pitt.edu/id/eprint/21540

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