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Tritiation of semiconductor materials for micropower application

Liu, B and Kherani, NP and Zukotynski, S and Antoniazzi, AB and Chen, KP (2008) Tritiation of semiconductor materials for micropower application. Fusion Science and Technology, 54 (2). 627 - 630. ISSN 1536-1055

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We report on a simple and versatile method for the integration of tritium in semiconductor materials. A variety of semiconductor materials are exposed to tritium (T2) gas at pressures of up to 120 bar and temperatures of up to 250°C Tritiated materials include hydrogenated amorphous silicon (a-Si:H), crystalline silicon (c-Si), silica and carbon nanotubes (CNT). Deep ultra-violet laser irradiation was used to lock tritium in silica films. Effusion measurements show the presence of stable tritium in silicon, silica and CNTs up to 400°C. IR absorption spectra show a Si-T stretching mode at 1200 cm-1 indicating the formation of stable Si-T bonds in a-Si:H. SIMS measurements show that the penetration depth of tritium in a-Si:H and c-Si is 150 and 10 nm, respectively; the concentration of tritium locked in a-Si:H and c-Si is 20 and 4 at.%, respectively. In tritiated silica, 248-nm UV laser irradiation locks the permeated tritium at stable chemical bonding sites in the silica lattice. Thermal effusion measurement shows that 0.5 wt. % tritium can be stably immobilized in CNTs. The application of tritiated silicon as a cold electron source is demonstrated.


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Item Type: Article
Status: Published
CreatorsEmailPitt UsernameORCID
Liu, B
Kherani, NP
Zukotynski, S
Antoniazzi, AB
Chen, KPpec9@pitt.eduPEC90000-0002-4830-0817
Date: 1 January 2008
Date Type: Publication
Access Restriction: No restriction; Release the ETD for access worldwide immediately.
Journal or Publication Title: Fusion Science and Technology
Volume: 54
Number: 2
Page Range: 627 - 630
Event Type: Conference
DOI or Unique Handle: 10.13182/fst08-a1893
Institution: University of Pittsburgh
Schools and Programs: Swanson School of Engineering > Electrical and Computer Engineering
Refereed: Yes
ISSN: 1536-1055
Date Deposited: 09 Jun 2014 15:24
Last Modified: 22 Jun 2021 13:55


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