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Tritiation of amorphous and crystalline silicon using T <inf>2</inf> gas

Liu, B and Chen, KP and Kherani, NP and Kosteski, T and Costea, S and Zukotynski, S and Antoniazzi, AB (2006) Tritiation of amorphous and crystalline silicon using T <inf>2</inf> gas. Applied Physics Letters, 89 (4). ISSN 0003-6951

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Abstract

Incorporation of tritium in hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) at 250 °C using tritium (T 2) gas at pressures of up to 120 atm is reported. The tritium is stored in a surface layer which is approximately 150 and 10 nm for a-Si:H and c-Si, respectively. The concentration of tritium occluded in planar and textured c-Si is linearly dependent on the total surface area. The tritium is stable and the dominant tritium evolution occurs at temperatures above 300 °C. The concentration of tritium locked in a-Si:H and c-Si was 20 and 4 at. %, respectively. Self-catalysis appears to be important in the tritiation process. © 2006 American Institute of Physics.


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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Liu, B
Chen, KPpec9@pitt.eduPEC9
Kherani, NP
Kosteski, T
Costea, S
Zukotynski, S
Antoniazzi, AB
Date: 4 August 2006
Date Type: Publication
Journal or Publication Title: Applied Physics Letters
Volume: 89
Number: 4
DOI or Unique Handle: 10.1063/1.2234844
Schools and Programs: Swanson School of Engineering > Electrical and Computer Engineering
Refereed: Yes
ISSN: 0003-6951
Date Deposited: 01 Jul 2014 17:36
Last Modified: 16 Feb 2019 15:55
URI: http://d-scholarship.pitt.edu/id/eprint/22147

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