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Tritium locked in silica using 248 nm KrF laser irradiation

Liu, B and Chen, KP and Kherani, NP and Zukotynski, S and Antoniazzi, AB (2006) Tritium locked in silica using 248 nm KrF laser irradiation. Applied Physics Letters, 88 (13). ISSN 0003-6951

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Abstract

In this Letter we report on selectively occluding tritium in a silica film on a silicon substrate using a combination of high-pressure tritium loading and 248 nm KrF laser irradiation. Sixty percent of tritium dissolved in the silica film was bonded by laser irradiation. The concentration of the bonded tritium was proportional to the total laser fluence. Tritium effusion experiments indicated that the laser-locked tritium existed stably in the glass matrix up to 400 °C. In this work we point a way to a safe and simple approach for the integration of on-chip radioisotope micropower sources for micromechanical and microelectronic applications. © 2006 American Institute of Physics.


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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Liu, B
Chen, KPpec9@pitt.eduPEC9
Kherani, NP
Zukotynski, S
Antoniazzi, AB
Date: 10 April 2006
Date Type: Publication
Journal or Publication Title: Applied Physics Letters
Volume: 88
Number: 13
DOI or Unique Handle: 10.1063/1.2188384
Schools and Programs: Swanson School of Engineering > Electrical and Computer Engineering
Refereed: Yes
ISSN: 0003-6951
Date Deposited: 01 Jul 2014 17:39
Last Modified: 02 Feb 2019 16:56
URI: http://d-scholarship.pitt.edu/id/eprint/22173

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