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Ion-irradiation enhanced epitaxial growth of sol-gel TiO<inf>2</inf> films

Lee, JK and Jung, HS and Wang, Y and Theodore, ND and Alford, TL and Nastasi, M (2011) Ion-irradiation enhanced epitaxial growth of sol-gel TiO<inf>2</inf> films. Applied Physics A: Materials Science and Processing, 103 (1). 179 - 184. ISSN 0947-8396

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We report the epitaxial growth of sol-gel TiO2 films by using ion-irradiation enhanced synthesis. Our present study shows that the ion-beam process can provide highly crystalline TiO2 even at 350°C. Nuclear energy deposition at amorphous/crystalline interface plays a dominant role in the epitaxial growth of the films at the reduced temperature via a defect-migration mechanism. In addition, the ion irradiation allows for increasing the film density by balancing the crystallization rate and the escape rate of organic components. © 2010 Springer-Verlag.


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Item Type: Article
Status: Published
CreatorsEmailPitt UsernameORCID
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Jung, HS
Wang, Y
Theodore, ND
Alford, TL
Nastasi, M
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 1 April 2011
Date Type: Publication
Journal or Publication Title: Applied Physics A: Materials Science and Processing
Volume: 103
Number: 1
Page Range: 179 - 184
DOI or Unique Handle: 10.1007/s00339-010-5985-5
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0947-8396
Date Deposited: 15 Oct 2014 20:32
Last Modified: 22 Jun 2021 13:56


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