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Thermoelectric properties of Al-doped mesoporous ZnO thin films

Hong, MH and Park, CS and Seo, WS and Lim, YS and Lee, JK and Park, HH (2013) Thermoelectric properties of Al-doped mesoporous ZnO thin films. Journal of Nanomaterials, 2013. ISSN 1687-4110

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Abstract

Al-doped mesoporous ZnO thin films were synthesized by a sol-gel process and an evaporation-induced self-assembly process. In this work, the effects of Al doping concentration on the electrical conductivity and characterization of mesoporous ZnO thin films were investigated. By changing the Al doping concentration, ZnO grain growth is inhibited, and the mesoporous structure of ZnO is maintained during a relatively high temperature annealing process. The porosity of Al-doped mesoporous ZnO thin films increased slightly with increasing Al doping concentration. Finally, as electrical conductivity was increased as electrons were freed and pore structure was maintained by inhibiting grain growth, the thermoelectric property was enhanced with increasing Al concentration. © 2013 Min-Hee Hong et al.


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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Hong, MH
Park, CS
Seo, WS
Lim, YS
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Park, HH
Centers: Other Centers, Institutes, or Units > Petersen Institute of NanoScience and Engineering
Date: 21 October 2013
Date Type: Publication
Journal or Publication Title: Journal of Nanomaterials
Volume: 2013
DOI or Unique Handle: 10.1155/2013/131537
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 1687-4110
Other ID: Article ID 131537
Date Deposited: 20 Oct 2014 14:23
Last Modified: 21 Feb 2018 16:55
URI: http://d-scholarship.pitt.edu/id/eprint/23328

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