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Nb-doped tio <inf>2</inf>: A new compact layer material for TiO <inf>2</inf> dye-sensitized solar cells

Lee, S and Noh, JH and Han, HS and Yim, DK and Kim, DH and Lee, JK and Kim, JY and Jung, HS and Hong, KS (2009) Nb-doped tio <inf>2</inf>: A new compact layer material for TiO <inf>2</inf> dye-sensitized solar cells. Journal of Physical Chemistry C, 113 (16). 6878 - 6882. ISSN 1932-7447

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Abstract

A Nb-doped TiO 2 (NTO) thin film was deposited on a fluorine-doped tin oxide (FTO) electrode by pulsed laser deposition (PLD) and its application as a new compact layer material for dye-sensitized solar cells (DSSCs) was investigated. On the basis of the investigation of the dark current, open circuit voltage (V oc) decay, current-voltage (/- V) characteristics, and electrochemical impedance spectra (EIS), it was found that the NTO layer functioned as both a blocking layer and an ancillary transparent conducting oxide (TCO) layer. As a blocking layer, the NTO layer suppressed the charge recombination from TCO to the electrolyte. In addition, as an ancillary TCO layer, the NTO layer reduced the interfacial resistance between the TiO 2 layer and TCO by forming an ohmic contact. As a result, the overall energy conversion efficiency of the DSSC incorporating the NTO layer was enhanced by 21.2% compared to that with the bare FTO substrate and 4.1% compared to that with the undoped TiO 2 layer, owing to the enhanced charge transfer and collection characteristics of the NTO layer. Our results demonstrated that NTO is a promising alternative to the conventional TiO 2 compact layer in highly efficient DSSCs. © 2009 American Chemical Society.


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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Lee, S
Noh, JH
Han, HS
Yim, DK
Kim, DH
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Kim, JY
Jung, HS
Hong, KS
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 23 April 2009
Date Type: Publication
Journal or Publication Title: Journal of Physical Chemistry C
Volume: 113
Number: 16
Page Range: 6878 - 6882
DOI or Unique Handle: 10.1021/jp9002017
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 1932-7447
Date Deposited: 27 Oct 2014 17:44
Last Modified: 22 Jun 2021 13:56
URI: http://d-scholarship.pitt.edu/id/eprint/23413

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