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Indium-tin-oxide-based transparent conducting layers for highly efficient photovoltaic devices

Lee, S and Noh, JH and Bae, ST and Cho, IS and Kim, JY and Shin, H and Lee, JK and Jung, HS and Hong, KS (2009) Indium-tin-oxide-based transparent conducting layers for highly efficient photovoltaic devices. Journal of Physical Chemistry C, 113 (17). 7443 - 7447. ISSN 1932-7447

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Additional hydrogen (H2) annealing and subsequent electrochemical treatment are found to make tin-doped indium oxide (ITO)-based photoelectrodes suitable for highly efficient dye sensitized solar cells. The additional H2 annealing process recovered the electrical conductivity of the ITO film the same as its initial high conductivity, which enhanced the charge collecting property. Moreover, the employment of electrochemical oxidation of TiO2/ITO photoelectrode improved the energy conversion efficiency of the ITO-based dyesensitized solar cells (DSSC), higher than that of a conventional FTO-based DSSC. Electrochemical impedance analysis showed that the H2 annealing process reduced the internal resistance of the cell, i.e., the resistance of the ITO and the Schottky barrier at the TiO 2/ITO interface were reduced, and that the electrochemical treatment recovered the diodelike characteristics of the DSSC by retarding back electron transfer from the photoelectrode to the electrolyte. The present work demonstrates that thermally and electrochemically modified ITO-based photoelectrode is another alternative to the conventionally used FTO-based photoelectrode. © 2009 American Chemical Society.


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Item Type: Article
Status: Published
CreatorsEmailPitt UsernameORCID
Lee, S
Noh, JH
Bae, ST
Cho, IS
Kim, JY
Shin, H
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Jung, HS
Hong, KS
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 30 April 2009
Date Type: Publication
Journal or Publication Title: Journal of Physical Chemistry C
Volume: 113
Number: 17
Page Range: 7443 - 7447
DOI or Unique Handle: 10.1021/jp809011a
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 1932-7447
Date Deposited: 27 Oct 2014 17:44
Last Modified: 22 Jun 2021 13:56


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