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Ion implantation effects in single crystal Si investigated by Raman spectroscopy

Harriman, TA and Lucca, DA and Lee, JK and Klopfstein, MJ and Herrmann, K and Nastasi, M (2009) Ion implantation effects in single crystal Si investigated by Raman spectroscopy. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 267 (8-9). 1232 - 1234. ISSN 0168-583X

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Abstract

A study of the effects of Ar ion implantation on the structural transformation of single crystal Si investigated by confocal Raman spectroscopy is presented. Implantation was performed at 77 K using 150 keV Ar++ with fluences ranging from 2 × 1013 to 1 × 1015 ions/cm2. The Raman spectra showed a progression from crystalline to highly disordered structure with increasing fluence. The 520 cm-1 c-Si peak was seen to decrease in intensity, broaden and exhibit spectral shifts indicating an increase in lattice disorder and changes in the residual stress state. In addition, an amorphous Si band first appeared as a shoulder on the 520 cm-1 peak and then shifted to lower wavenumbers as a single broadband peak with a spectral center of 465 cm-1. Additionally, the emergence of the a-Si TA phonon band and the decrease of the c-Si 2TA and 2TO phonon bands also indicated the same structural transition from crystalline to highly disordered. The Raman results were compared to those obtained by channeling RBS. © 2009 Elsevier B.V.


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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Harriman, TA
Lucca, DA
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Klopfstein, MJ
Herrmann, K
Nastasi, M
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 1 May 2009
Date Type: Publication
Journal or Publication Title: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume: 267
Number: 8-9
Page Range: 1232 - 1234
DOI or Unique Handle: 10.1016/j.nimb.2009.01.021
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0168-583X
Date Deposited: 30 Oct 2014 16:41
Last Modified: 16 Feb 2019 21:55
URI: http://d-scholarship.pitt.edu/id/eprint/23420

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