Structure and dielectric properties of cubic Bi<inf>2</inf>(Zn <inf>1/3</inf>Ta<inf>2/3</inf>)<inf>2</inf> O<inf>7</inf> thin films

Noh, JH and Hong, HB and Lee, JK and Cho, CM and Kim, JY and Lee, S and Cho, IS and Jung, HS and Hong, KS (2009) Structure and dielectric properties of cubic Bi<inf>2</inf>(Zn <inf>1/3</inf>Ta<inf>2/3</inf>)<inf>2</inf> O<inf>7</inf> thin films. Journal of Applied Physics, 106 (8). ISSN 0021-8979

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Abstract

Pyrochlore Bi2(Zn1/3Ta2/3)2 O7 (BZT) films were prepared by pulsed laser deposition on Pt/TiO2/SiO2/Si substrates. In contrast to bulk monoclinic BZT ceramics, the BZT films have a cubic structure mediated by an interfacial layer. The dielectric properties of the cubic BZT films [ε∼177, temperature coefficient of capacitance (TCC) ∼-170 ppm/°C] are much different from those of monoclinic BZT ceramics (ε∼61, TCC ∼+60 ppm/°C). Increasing the thickness of the BZT films returns the crystal structure to the monoclinic phase, which allows the dielectric properties of the BZT films to be tuned without changing their chemical composition. © 2009 American Institute of Physics.

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Details

Item Type:	Article
Status:	Published
Creators/Authors:	Creators Email Pitt Username ORCID Noh, JH Hong, HB Lee, JK jul37@pitt.edu JUL37 0000-0002-7778-7679 Cho, CM Kim, JY Lee, S Cho, IS Jung, HS Hong, KS
Centers:	Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date:	10 November 2009
Date Type:	Publication
Journal or Publication Title:	Journal of Applied Physics
Volume:	106
Number:	8
DOI or Unique Handle:	10.1063/1.3246807
Schools and Programs:	Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed:	Yes
ISSN:	0021-8979
Date Deposited:	30 Oct 2014 16:41
Last Modified:	22 Jun 2021 13:56
URI:	http://d-scholarship.pitt.edu/id/eprint/23422

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