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Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

Noh, JH and Jung, HS and Lee, JK and Kim, JY and Cho, CM and An, JS and Hong, KS (2008) Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films. Journal of Applied Physics, 104 (7). ISSN 0021-8979

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Abstract

Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01× 10-4 Ω cm. However, after annealing at 450 °C in air, the electrical resistivity of the AZO films increased to 1.97× 10-1 Ω cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H2 recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H2 annealing. A photoluminescence study showed that oxygen interstitial (Oi′) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films. © 2008 American Institute of Physics.


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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Noh, JH
Jung, HS
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Kim, JY
Cho, CM
An, JS
Hong, KS
Centers: Other Centers, Institutes, or Units > Petersen Institute of NanoScience and Engineering
Date: 22 October 2008
Date Type: Publication
Journal or Publication Title: Journal of Applied Physics
Volume: 104
Number: 7
DOI or Unique Handle: 10.1063/1.2987472
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0021-8979
Date Deposited: 30 Oct 2014 16:31
Last Modified: 02 Feb 2019 16:58
URI: http://d-scholarship.pitt.edu/id/eprint/23429

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