Evidence for ion irradiation induced dissociation and reconstruction of Si-H bonds in hydrogen-implanted silicon

Di, ZF and Wang, YQ and Nastasi, M and Shao, L and Lee, JK and Theodore, ND (2008) Evidence for ion irradiation induced dissociation and reconstruction of Si-H bonds in hydrogen-implanted silicon. Applied Physics Letters, 93 (10). ISSN 0003-6951

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Abstract

We observe that H-related chemical bonds formed in H-implanted Si will evolve under subsequent ion irradiation. During ion irradiation hydrogen is inclined to dissociate from simple H-related defect complexes (i.e., VHx and IHx), diffuse, and attach to vacancy-type defects resulting in new platelet formation, which facilitate surface blistering after annealing, a process completely inhibited in the absence of ion irradiation. The understanding of our results provides insight into the structure and stability of hydrogen-related defects in silicon. © 2008 American Institute of Physics.

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Details

Item Type:	Article
Status:	Published
Creators/Authors:	Creators Email Pitt Username ORCID Di, ZF Wang, YQ Nastasi, M Shao, L Lee, JK jul37@pitt.edu JUL37 0000-0002-7778-7679 Theodore, ND
Centers:	Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date:	19 September 2008
Date Type:	Publication
Journal or Publication Title:	Applied Physics Letters
Volume:	93
Number:	10
DOI or Unique Handle:	10.1063/1.2979686
Schools and Programs:	Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed:	Yes
ISSN:	0003-6951
Date Deposited:	30 Oct 2014 16:30
Last Modified:	02 Feb 2019 21:55
URI:	http://d-scholarship.pitt.edu/id/eprint/23432

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