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Strain relaxation in sol-gel grown epitaxial anatase thin films

Jung, HS and Lee, JK and Lee, J and Kang, BS and Jia, Q and Nastasi, M (2008) Strain relaxation in sol-gel grown epitaxial anatase thin films. Journal of Physical Chemistry C, 112 (11). 4205 - 4208. ISSN 1932-7447

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Anatase TiO2 thin films on LaAlO3 (LAO) substrates were epitaxially grown at a temperature as low as 350 °C using a simple sol-gel process. X-ray diffraction and high-resolution transmission electron microscopy showed that the anatase films have the epitaxial relationship of (001)TiO2∥(001)LaAlO3. While the low-temperature growth of the anatase film yielded a residual strain, subsequent annealing at higher temperatures can remove the strain and recover the lattice parameters of a perfect anatase crystal. Measurements of the oxygen content in the anatase films by non-Rutherford elastic resonance scattering analysis suggest that the strain relaxation during higher temperature annealing is due to the incorporation of oxygen and the concomitant annihilation of oxygen vacancies. © 2008 American Chemical Society.


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Item Type: Article
Status: Published
CreatorsEmailPitt UsernameORCID
Jung, HS
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Lee, J
Kang, BS
Jia, Q
Nastasi, M
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 20 March 2008
Date Type: Publication
Access Restriction: No restriction; Release the ETD for access worldwide immediately.
Journal or Publication Title: Journal of Physical Chemistry C
Volume: 112
Number: 11
Page Range: 4205 - 4208
DOI or Unique Handle: 10.1021/jp076194n
Institution: University of Pittsburgh
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 1932-7447
Date Deposited: 30 Oct 2014 14:32
Last Modified: 22 Jun 2021 13:56


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