Jung, HS and Lee, JK and Lee, J and Kang, BS and Jia, Q and Nastasi, M
(2008)
Strain relaxation in sol-gel grown epitaxial anatase thin films.
Journal of Physical Chemistry C, 112 (11).
4205 - 4208.
ISSN 1932-7447
![[img]](http://d-scholarship.pitt.edu/style/images/fileicons/text_plain.png) |
Plain Text (licence)
Available under License : See the attached license file.
Download (1kB)
|
Abstract
Anatase TiO2 thin films on LaAlO3 (LAO) substrates were epitaxially grown at a temperature as low as 350 °C using a simple sol-gel process. X-ray diffraction and high-resolution transmission electron microscopy showed that the anatase films have the epitaxial relationship of (001)TiO2∥(001)LaAlO3. While the low-temperature growth of the anatase film yielded a residual strain, subsequent annealing at higher temperatures can remove the strain and recover the lattice parameters of a perfect anatase crystal. Measurements of the oxygen content in the anatase films by non-Rutherford elastic resonance scattering analysis suggest that the strain relaxation during higher temperature annealing is due to the incorporation of oxygen and the concomitant annihilation of oxygen vacancies. © 2008 American Chemical Society.
Share
| Citation/Export: |
|
| Social Networking: |
|
Details
Metrics
Monthly Views for the past 3 years
Plum Analytics
Altmetric.com
Actions (login required)
 |
View Item |
![[feed]](/images/feed-icon-32x32.png){kind=icon}