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Investigation of stress-induced (100) platelet formation and surface exfoliation in plasma hydrogenated Si

Di, Z and Wang, Y and Nastasi, M and Rossi, F and Lee, JK and Shao, L and Thompson, PE (2007) Investigation of stress-induced (100) platelet formation and surface exfoliation in plasma hydrogenated Si. Applied Physics Letters, 91 (24). ISSN 0003-6951

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Abstract

We have studied the mechanisms underlying stress-induced platelet formation during plasma hydrogenation. The stress is purposely introduced by a buried SiGe stained layer in a Si substrate. During plasma hydrogenation, diffusing H is trapped in the region of the SiGe layer and H platelets are formed. The platelet orientation is controlled by the in-plane compressive stress, which favors nucleation and growth of platelets in the plane of stress and parallel to the substrate surface, and ultimately leads to controlled fracture along the SiGe layer. Also, the SiSiGeSi structure is found to be more efficient in utilizing H for platelet formation and growth compared to H ion implanted Si because there are fewer defects to trap H (e.g., Vn Hm and In Hm); therefore, the total H dose needed for layer exfoliation is greatly reduced. © 2007 American Institute of Physics.


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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Di, Z
Wang, Y
Nastasi, M
Rossi, F
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Shao, L
Thompson, PE
Centers: Other Centers, Institutes, or Units > Petersen Institute of NanoScience and Engineering
Date: 20 December 2007
Date Type: Publication
Journal or Publication Title: Applied Physics Letters
Volume: 91
Number: 24
DOI or Unique Handle: 10.1063/1.2822414
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0003-6951
Date Deposited: 05 Nov 2014 20:47
Last Modified: 02 Feb 2019 21:55
URI: http://d-scholarship.pitt.edu/id/eprint/23455

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