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Microwave enhanced ion-cut silicon layer transfer

Thompson, DC and Alford, TL and Mayer, JW and Höchbauer, T and Lee, JK and Nastasi, M and Lau, SS and Theodore, ND and Chu, PK (2007) Microwave enhanced ion-cut silicon layer transfer. Journal of Applied Physics, 101 (11). ISSN 0021-8979

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Microwave heating has been used to decrease the time required for exfoliation of thin single-crystalline silicon layers onto insulator substrates using ion-cut processing. Samples exfoliated in a 2.45 GHz, 1300 W cavity applicator microwave system saw a decrease in incubation times as compared to conventional anneal processes. Rutherford backscattering spectrometry, cross sectional scanning electron microscopy, cross sectional transmission electron microscopy, and selective aperture electron diffraction were used to determine the transferred layer thickness and crystalline quality. The surface quality was determined by atomic force microscopy. Hall measurements were used to determine electrical properties as a function of radiation repair anneal times. Results of physical and electrical characterizations demonstrate that the end products of microwave enhanced ion-cut processing do not appreciably differ from those using more traditional means of exfoliation. © 2007 American Institute of Physics.


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Item Type: Article
Status: Published
CreatorsEmailPitt UsernameORCID
Thompson, DC
Alford, TL
Mayer, JW
Höchbauer, T
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Nastasi, M
Lau, SS
Theodore, ND
Chu, PK
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 22 June 2007
Date Type: Publication
Journal or Publication Title: Journal of Applied Physics
Volume: 101
Number: 11
DOI or Unique Handle: 10.1063/1.2737387
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0021-8979
Date Deposited: 05 Nov 2014 20:46
Last Modified: 22 Jan 2019 19:55


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