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Seed-layer mediated orientation evolution in dielectric Bi-Zn-Ti-Nb-O thin films

Kim, JY and Noh, JH and Lee, S and Yoon, SH and Cho, CM and Hong, KS and Jung, HS and Lee, JK (2007) Seed-layer mediated orientation evolution in dielectric Bi-Zn-Ti-Nb-O thin films. Applied Physics Letters, 91 (23). ISSN 0003-6951

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Abstract

Highly (hhh) -oriented pyrochlore Bi-Zn-Ti-Nb-O (BZTN) thin films were fabricated via metal-organic decomposition using orientation template layers. The preferred orientation was ascribed to the interfacial layer, the lattice parameter of which is similar to BZTN. High-resolution transmission electron microscopy supported that the interfacial layer consists of Bi and Pt. The (hhh) -oriented thin films exhibited a highly insulating nature enabling feasible applications in electronic devices, particularly voltage tunable application. The BZTN thin films did not show any apparent dielectric anisotropy and the slightly enhanced dielectric properties were discussed in connection to the internal stress and the grain boundary effect. © 2007 American Institute of Physics.


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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Kim, JY
Noh, JH
Lee, S
Yoon, SH
Cho, CM
Hong, KS
Jung, HS
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Centers: Other Centers, Institutes, or Units > Petersen Institute of NanoScience and Engineering
Date: 14 December 2007
Date Type: Publication
Journal or Publication Title: Applied Physics Letters
Volume: 91
Number: 23
DOI or Unique Handle: 10.1063/1.2806193
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0003-6951
Date Deposited: 05 Nov 2014 20:40
Last Modified: 02 Feb 2019 16:58
URI: http://d-scholarship.pitt.edu/id/eprint/23460

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