Jacobsohn, LG and Bennett, BL and Lee, JK and Muenchausen, RE and Smith, JF and Uberuaga, BP and Cooke, DW
(2007)
The central role of oxygen on H<sup>+</sup>-irradiated Lu<inf>2</inf>SiO<inf>5</inf> luminescence.
Journal of Luminescence, 124 (1).
173 - 177.
ISSN 0022-2313
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Abstract
The behavior of self-trapped defects (STDs) in ion-beam irradiated Lu2SiO5 (LSO) crystal has been investigated via temperature-dependent radioluminescence (RL) measurements. Production of oxygen vacancies is the major effect of H+ irradiation on luminescencent properties of this phosphor. Luminescence centers for self-trapped exciton (STE) and self-trapped hole emission are assigned to oxygen vacancies and oxygen ions, respectively. Ion-induced structural damage modifies the thermal stability of the STDs and creates perturbed STEs. A striking effect of ion irradiation is the approximate factor-of-two enhancement of STE RL intensity that results from implantation of only a thin (∼250 nm) surface layer of LSO. This enhancement is attributed to ion-beam modification of a surface dead layer. © 2006 Elsevier B.V. All rights reserved.
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