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The central role of oxygen on H<sup>+</sup>-irradiated Lu<inf>2</inf>SiO<inf>5</inf> luminescence

Jacobsohn, LG and Bennett, BL and Lee, JK and Muenchausen, RE and Smith, JF and Uberuaga, BP and Cooke, DW (2007) The central role of oxygen on H<sup>+</sup>-irradiated Lu<inf>2</inf>SiO<inf>5</inf> luminescence. Journal of Luminescence, 124 (1). 173 - 177. ISSN 0022-2313

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The behavior of self-trapped defects (STDs) in ion-beam irradiated Lu2SiO5 (LSO) crystal has been investigated via temperature-dependent radioluminescence (RL) measurements. Production of oxygen vacancies is the major effect of H+ irradiation on luminescencent properties of this phosphor. Luminescence centers for self-trapped exciton (STE) and self-trapped hole emission are assigned to oxygen vacancies and oxygen ions, respectively. Ion-induced structural damage modifies the thermal stability of the STDs and creates perturbed STEs. A striking effect of ion irradiation is the approximate factor-of-two enhancement of STE RL intensity that results from implantation of only a thin (∼250 nm) surface layer of LSO. This enhancement is attributed to ion-beam modification of a surface dead layer. © 2006 Elsevier B.V. All rights reserved.


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Item Type: Article
Status: Published
CreatorsEmailPitt UsernameORCID
Jacobsohn, LG
Bennett, BL
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Muenchausen, RE
Smith, JF
Uberuaga, BP
Cooke, DW
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 1 May 2007
Date Type: Publication
Journal or Publication Title: Journal of Luminescence
Volume: 124
Number: 1
Page Range: 173 - 177
DOI or Unique Handle: 10.1016/j.jlumin.2006.06.005
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0022-2313
Date Deposited: 07 Nov 2014 17:00
Last Modified: 22 Jun 2021 20:55


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