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Microwave activation of exfoliation in ion-cut silicon layer transfer

Thompson, DC and Alford, TL and Mayer, JW and Hochbauer, T and Lee, JK and Nastasi, M and David Theodore, N (2007) Microwave activation of exfoliation in ion-cut silicon layer transfer. Materials Research Society Symposium Proceedings, 994. 137 - 142. ISSN 0272-9172

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Microwave heating is used to initiate the ion-cut process for transfer of coherent silicon-layers onto insulator substrates. Hydrogen and boron co-implanted silicon was bonded to an insulative substrate before processing inside a 2.45 GHz, 1300 W cavity applicator microwave system. Sample temperatures were measured using an optical pyrometer. Physical characterization demonstrates high crystallinity in transferred layers. Thicknesses of the transferred layers are comparable to previous ion-cut exfoliation techniques. Surface quality compares well with previous ion-cut studies. Electrical characterization demonstrates that the mobility and carrier density of microwave activated ion - cut silicon on insulator processed samples compares well with previous annealing techniques. © 2007 Materials Research Society.


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Item Type: Article
Status: Published
CreatorsEmailPitt UsernameORCID
Thompson, DC
Alford, TL
Mayer, JW
Hochbauer, T
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Nastasi, M
David Theodore, N
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 1 January 2007
Date Type: Publication
Journal or Publication Title: Materials Research Society Symposium Proceedings
Volume: 994
Page Range: 137 - 142
DOI or Unique Handle: 10.1557/proc-0994-f11-07
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0272-9172
Other ID: Article # 0994-F11-07
Date Deposited: 07 Nov 2014 16:59
Last Modified: 04 Aug 2020 19:56


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