Thompson, DC and Alford, TL and Mayer, JW and Hochbauer, T and Lee, JK and Nastasi, M and David Theodore, N
(2007)
Microwave activation of exfoliation in ion-cut silicon layer transfer.
Materials Research Society Symposium Proceedings, 994.
137 - 142.
ISSN 0272-9172
![[img]](http://d-scholarship.pitt.edu/style/images/fileicons/text_plain.png) |
Plain Text (licence)
Available under License : See the attached license file.
Download (1kB)
|
Abstract
Microwave heating is used to initiate the ion-cut process for transfer of coherent silicon-layers onto insulator substrates. Hydrogen and boron co-implanted silicon was bonded to an insulative substrate before processing inside a 2.45 GHz, 1300 W cavity applicator microwave system. Sample temperatures were measured using an optical pyrometer. Physical characterization demonstrates high crystallinity in transferred layers. Thicknesses of the transferred layers are comparable to previous ion-cut exfoliation techniques. Surface quality compares well with previous ion-cut studies. Electrical characterization demonstrates that the mobility and carrier density of microwave activated ion - cut silicon on insulator processed samples compares well with previous annealing techniques. © 2007 Materials Research Society.
Share
| Citation/Export: |
|
| Social Networking: |
|
Details
Metrics
Monthly Views for the past 3 years
Plum Analytics
Altmetric.com
Actions (login required)
 |
View Item |
![[feed]](/images/feed-icon-32x32.png){kind=icon}