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Effect of margin widths on the residual stress in a multi-layer ceramic capacitor

Park, JS and Shin, H and Hong, KS and Jung, HS and Lee, JK and Rhee, KY (2006) Effect of margin widths on the residual stress in a multi-layer ceramic capacitor. Microelectronic Engineering, 83 (11-12). 2558 - 2563. ISSN 0167-9317

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The influence of margin widths on the evolution of residual stress components in a multilayer ceramic capacitor has been investigated numerically by systematically varying the widths of the housing and lateral margins. As for the in-plane residual stress components (compressive), σ11 is much relieved by the housing margin which exists along the length (axis 1) direction, while σ22 is much relieved by the lateral margin which exists along the width (axis 2) direction. The out-of-plane stress component σ33 (tensile) increases via both the housing and lateral margins within the range of the critical width (about 150 μm), beyond which σ33 is not markedly influenced by the widths of margins. © 2006 Elsevier B.V. All rights reserved.


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Item Type: Article
Status: Published
CreatorsEmailPitt UsernameORCID
Park, JS
Shin, H
Hong, KS
Jung, HS
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Rhee, KY
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 1 November 2006
Date Type: Publication
Journal or Publication Title: Microelectronic Engineering
Volume: 83
Number: 11-12
Page Range: 2558 - 2563
DOI or Unique Handle: 10.1016/j.mee.2006.06.008
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0167-9317
Date Deposited: 18 Nov 2014 16:02
Last Modified: 22 Jun 2021 20:55


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