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Effects of hydrogen implantation on the photoluminescence and carrier mobility of ZnO films

Hamby, DW and Lucca, DA and Lee, JK and Nastasi, M and Kang, HS and Lee, SY (2006) Effects of hydrogen implantation on the photoluminescence and carrier mobility of ZnO films. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 249 (1-2 SP). 196 - 199. ISSN 0168-583X

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Abstract

A study of the effects of H+ implantation on the photoluminescence (PL) and carrier mobility of ZnO thin films is presented. The 4.2 K PL of the as-grown films exhibits free-exciton luminescence at 3.3755 eV and strong bound-exciton luminescence between 3.33 and 3.37 eV including a peak observed at 3.3313 eV which is identified as the collapse of excitons bound to structural defects. While the implantation process results in a slight reduction of the overall PL intensity due to the introduction of nonradiative centers, the intensity of the 3.3313 eV bound-exciton peak is reduced by more than two orders of magnitude. We attribute this reduction to preferential interaction of hydrogen with structural defects, such as passivation or the formation of complex defects. Room temperature Hall measurements show that changes in the optical properties of H-implanted ZnO are also accompanied by an increased carrier concentration and decreased carrier mobility. © 2006 Elsevier B.V. All rights reserved.


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Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Hamby, DW
Lucca, DA
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Nastasi, M
Kang, HS
Lee, SY
Centers: Other Centers, Institutes, or Units > Petersen Institute of NanoScience and Engineering
Date: 1 August 2006
Date Type: Publication
Journal or Publication Title: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume: 249
Number: 1-2 SP
Page Range: 196 - 199
DOI or Unique Handle: 10.1016/j.nimb.2006.03.113
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0168-583X
Date Deposited: 17 Nov 2014 19:57
Last Modified: 22 May 2019 12:55
URI: http://d-scholarship.pitt.edu/id/eprint/23480

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