Hamby, DW and Lucca, DA and Lee, JK and Nastasi, M
(2006)
Photoluminescence of He-implanted ZnO.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242 (1-2).
663 - 666.
ISSN 0168-583X
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Abstract
A study of the effects of ion-implanted He+ on the 4.2 K photoluminescence (PL) of ZnO is presented. This investigation is motivated by the need to further understand the effects of damage resulting from the implantation process on the PL of ZnO. For this study, 10 keV He+ ions were implanted with a fluence of 2.5 × 1013/cm2 in the (0 0 0 1) Zn-terminated surface. The implantation process is seen to reduce the overall luminescence efficiency, although the number and relative intensities of the bound-exciton peaks are observed to be similar to that of unimplanted ZnO. The 4.2 K PL of the implanted surface exhibits a broad orange/red peak near 1.86 eV nm and is attributed to damage introduced during the implantation process. This peak is identified as donor-acceptor pair (DAP) luminescence with a thermal activation energy of 11 meV. The 1.86 eV peak is not observed for H-implanted ZnO suggesting that H passivates the implantation-induced defects responsible for this luminescence. © 2005 Elsevier B.V. All rights reserved.
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