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Effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon films

Choi, W and Lee, JK and Findikoglu, AT (2006) Effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon films. Applied Physics Letters, 89 (26). ISSN 0003-6951

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Abstract

The authors report studies of the effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon (ACSi) films by means of capacitance-voltage (C-V) measurements. C-V curves were measured on metal-oxide-semiconductor (MOS) capacitors fabricated on 〈001〉- oriented ACSi films on polycrystalline substrates. From high-frequency C-V curves, the authors calculated a decrease of interface trap density from 2× 1012 to 1× 1011 cm-2 eV-1 as the grain mosaic spread in ACSi films improved from 13.7° to 6.5°. These results demonstrate the effectiveness of grain alignment as a process technique to achieve significantly enhanced performance in small-grained (≤1 μm) polycrystalline Si MOS-type devices. © 2006 American Institute of Physics.


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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Choi, W
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Findikoglu, AT
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 1 December 2006
Date Type: Publication
Journal or Publication Title: Applied Physics Letters
Volume: 89
Number: 26
DOI or Unique Handle: 10.1063/1.2424655
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0003-6951
Date Deposited: 17 Nov 2014 19:25
Last Modified: 22 Jan 2019 19:55
URI: http://d-scholarship.pitt.edu/id/eprint/23491

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