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Ion-cut of Si facilitated by interfacial defects of Si substrate/epitaxial layer grown by molecular-beam epitaxy

Shao, L and Lee, JK and Höchbauer, T and Nastasi, M and Thompson, PE and Rusakova, I and Seo, HW and Chen, QY and Liu, JR and Chu, WK (2006) Ion-cut of Si facilitated by interfacial defects of Si substrate/epitaxial layer grown by molecular-beam epitaxy. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242 (1-2). 509 - 511. ISSN 0168-583X

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Abstract

We have shown that the Si/Si interface produced by molecular-beam epitaxy (MBE) growth of Si on a Si substrate can significantly enhance the efficiency of ion cutting. MBE growth is performed at 650 °C. Samples are then implanted at room temperature by 62 keV H- to a dose of 7 × 10 16 ions/cm2. The implantation energy locates H-peak in the vicinity of the Si/Si interface, which is 600 nm below the Si surface. Scanning electron microscopy shows that, after post-implantation annealing at 300 °C for 50 min, the H implanted MBE Si has bubbles formed with an average diameters of 33 μm, which is around one order of magnitude larger than that observed in the control bulk silicon sample. It is also observed that the area covered with blisters is a factor of 2 larger for the MBE samples, a trend that is systematically observed for anneals carried out in the range of 300-550 °C. © 2005 Elsevier B.V. All rights reserved.

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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Shao, L
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Höchbauer, T
Nastasi, M
Thompson, PE
Rusakova, I
Seo, HW
Chen, QY
Liu, JR
Chu, WK
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 1 January 2006
Date Type: Publication
Journal or Publication Title: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume: 242
Number: 1-2
Page Range: 509 - 511
DOI or Unique Handle: 10.1016/j.nimb.2005.08.192
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0168-583X
Date Deposited: 12 Nov 2014 17:28
Last Modified: 22 Jun 2021 20:55
URI: http://d-scholarship.pitt.edu/id/eprint/23496

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