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Nucleation and growth of platelets in hydrogen-ion-implanted silicon

Nastasi, M and Höchbauer, T and Lee, JK and Misra, A and Hirth, JP and Ridgway, M and Lafford, T (2005) Nucleation and growth of platelets in hydrogen-ion-implanted silicon. Applied Physics Letters, 86 (15). 1 - 3. ISSN 0003-6951

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Abstract

H ion implantation into crystalline Si is known to result in the precipitation of planar defects in the form of platelets. Hydrogen-platelet formation is critical to the process that allows controlled cleavage of Si along the plane of the platelets and subsequent transfer and integration of thinly sliced Si with other substrates. Here we show that H-platelet formation is controlled by the depth of the radiation-induced damage and then develop a model that considers the influence of stress to correctly predict platelet orientation and the depth at which platelet nucleation density is a maximum. © 2005 American Institute of Physics.

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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Nastasi, M
Höchbauer, T
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Misra, A
Hirth, JP
Ridgway, M
Lafford, T
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 5 July 2005
Date Type: Publication
Journal or Publication Title: Applied Physics Letters
Volume: 86
Number: 15
Page Range: 1 - 3
DOI or Unique Handle: 10.1063/1.1900309
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0003-6951
Date Deposited: 12 Nov 2014 17:28
Last Modified: 05 Feb 2019 19:55
URI: http://d-scholarship.pitt.edu/id/eprint/23498

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