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Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation

Shao, L and Lin, Y and Lee, JK and Jia, QX and Wang, Y and Nastasi, M and Thompson, PE and Theodore, ND and Chu, PK and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2005) Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation. Applied Physics Letters, 87 (9). ISSN 0003-6951

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Abstract

We have developed an innovative approach without the use of ion implantation to transfer a high-quality thin Si layer for the fabrication of silicon-on-insulator wafers. The technique uses a buried strained SiGe layer, a few nanometers in thickness, to provide H trapping centers. In conjunction with H plasma hydrogenation, lift-off of the top Si layer can be realized with cleavage occurring at the depth of the strained SiGe layer. This technique avoids irradiation damage within the top Si layer that typically results from ion implantation used to create H trapping regions in the conventional ion-cut method. We explain the strain-facilitated layer transfer as being due to preferential vacancy aggregation within the strained layer and subsequent trapping of hydrogen, which lead to cracking in a well controlled manner. © 2005 American Institute of Physics.


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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Shao, L
Lin, Y
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Jia, QX
Wang, Y
Nastasi, M
Thompson, PE
Theodore, ND
Chu, PK
Alford, TL
Mayer, JW
Chen, P
Lau, SS
Centers: Other Centers, Institutes, or Units > Petersen Institute of NanoScience and Engineering
Date: 29 August 2005
Date Type: Publication
Journal or Publication Title: Applied Physics Letters
Volume: 87
Number: 9
DOI or Unique Handle: 10.1063/1.2032602
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0003-6951
Date Deposited: 12 Nov 2014 17:27
Last Modified: 05 Feb 2019 19:55
URI: http://d-scholarship.pitt.edu/id/eprint/23499

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