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Investigation of plasma hydrogenation and trapping mechanism for layer transfer

Chen, P and Chu, PK and Höchbauer, T and Lee, JK and Nastasi, M and Buca, D and Mantl, S and Loo, R and Caymax, M and Alford, T and Mayer, JW and Theodore, ND and Cai, M and Schmidt, B and Lau, SS (2005) Investigation of plasma hydrogenation and trapping mechanism for layer transfer. Applied Physics Letters, 86 (3). 1 - 3. ISSN 0003-6951

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Hydrogen ion implantation is conventionally used to initiate the transfer of Si thin layers onto Si wafers coated with thermal oxide. In this work, we studied the feasibility of using plasma hydrogenation to replace high dose H implantation for layer transfer. Boron ion implantation was used to introduce H -trapping centers into Si wafers to illustrate the idea. Instead of the widely recognized interactions between boron and hydrogen atoms, this study showed that lattice damage, i.e., dangling bonds, traps H atoms and can lead to surface blistering during hydrogenation or upon postannealing at higher temperature. The B implantation and subsequent processes control the uniformity of H trapping and the trap depths. While the trap centers were introduced by B implantation in this study, there are many other means to do the same without implantation. Our results suggest an innovative way to achieve high quality transfer of Si layers without H implantation at high energies and high doses. © 2005 American Institute of Physics.


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Item Type: Article
Status: Published
CreatorsEmailPitt UsernameORCID
Chen, P
Chu, PK
Höchbauer, T
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Nastasi, M
Buca, D
Mantl, S
Loo, R
Caymax, M
Alford, T
Mayer, JW
Theodore, ND
Cai, M
Schmidt, B
Lau, SS
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 17 January 2005
Date Type: Publication
Journal or Publication Title: Applied Physics Letters
Volume: 86
Number: 3
Page Range: 1 - 3
DOI or Unique Handle: 10.1063/1.1852087
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0003-6951
Date Deposited: 17 Nov 2014 17:56
Last Modified: 05 Feb 2019 19:55


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