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Optical observation of donor-bound excitons in hydrogen-implanted ZnO

Lee, JK and Nastasi, M and Hamby, DW and Lucca, DA (2005) Optical observation of donor-bound excitons in hydrogen-implanted ZnO. Applied Physics Letters, 86 (17). 1 - 3. ISSN 0003-6951

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The optical and structural properties of H or He implanted ZnO were investigated using low temperature photoluminescence (PL) and infrared spectroscopy (IR). H implantation is shown to influence the relative luminescence intensities of the donor bound excitons, enhancing the 3.361 eV peak, and changing the overall intensity of the PL spectrum. PL from He implanted ZnO is used to demonstrate that implantation damage is partially responsible for the variations observed in the PL of H implanted ZnO. IR spectra show that the increase in the relative intensity of the 3.361 eV peak coincides with an appearance of the H vibrational mode in the ZnO lattice. Our results indicate that the implanted H forms O-H bonds at Zn vacancies, and that it is these defect complexes which give rise to the shallow donors participating in the observed bound-exciton luminescence at 3.361 eV. © 2005 American Institute of Physics.


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Item Type: Article
Status: Published
CreatorsEmailPitt UsernameORCID
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Nastasi, M
Hamby, DW
Lucca, DA
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 25 April 2005
Date Type: Publication
Journal or Publication Title: Applied Physics Letters
Volume: 86
Number: 17
Page Range: 1 - 3
DOI or Unique Handle: 10.1063/1.1906330
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0003-6951
Date Deposited: 17 Nov 2014 15:42
Last Modified: 05 Feb 2019 19:55


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