Choi, W and Matias, V and Lee, JK and Findikoglu, AT
(2005)
Dependence of carrier mobility on grain mosaic spread in 〈001〉-oriented Si films grown on polycrystalline substrates.
Applied Physics Letters, 87 (15).
1 - 3.
ISSN 0003-6951
Abstract
We studied the dependence of carrier mobility on grain mosaic spread for 〈001〉-oriented, 200-to- 400-nm -thick Si thin films grown on polycrystalline metal substrates. The Hall mobility increased from 1% to 23% of that in bulk single-crystal Si with decreasing grain mosaic spread from 14° to 2°. For the same range of parameters, a model combining intragrain and grain boundary scattering yielded a decrease of the energy barrier height from 0.1 eV to less than 10-3 eV and an accompanying decrease of trap density from 6× 1011 cm-2 to less than 3× 1010 cm-2. These results demonstrate that, for polycrystalline Si films, improving the intergrain alignment is an effective and practical alternative to increasing the grain size to achieve enhanced mobility. © 2005 American Institute of Physics.
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