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Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness

Shao, L and Lin, Y and Swadener, JG and Lee, JK and Jia, QX and Wang, YQ and Nastasi, M and Thompson, PE and Theodore, ND and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2005) Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness. Applied Physics Letters, 87 (25). 1 - 3. ISSN 0003-6951

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Abstract

We report a process for the lift-off of an ultrathin Si layer. By plasma hydrogenation of a molecular-beam-epitaxy-grown heterostructure of SiSb-doped-SiSi, ultrashallow cracking is controlled to occur at the depth of the Sb-doped layer. Prior to hydrogenation, an oxygen plasma treatment is used to induce the formation of a thin oxide layer on the surface of the heterostructure. Chemical etching of the surface oxide layer after hydrogenation further thins the thickness of the separated Si layer to be only 15 nm. Mechanisms of hydrogen trapping and strain-facilitated cracking are discussed. © 2005 American Institute of Physics.


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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Shao, L
Lin, Y
Swadener, JG
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Jia, QX
Wang, YQ
Nastasi, M
Thompson, PE
Theodore, ND
Alford, TL
Mayer, JW
Chen, P
Lau, SS
Centers: Other Centers, Institutes, or Units > Petersen Institute of NanoScience and Engineering
Date: 27 December 2005
Date Type: Publication
Journal or Publication Title: Applied Physics Letters
Volume: 87
Number: 25
Page Range: 1 - 3
DOI or Unique Handle: 10.1063/1.2146211
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0003-6951
Date Deposited: 19 Nov 2014 20:17
Last Modified: 05 Feb 2019 19:55
URI: http://d-scholarship.pitt.edu/id/eprint/23555

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