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Effect of amorphous Si quantum-dot size on 1.54 μm luminescence of Er

Park, NM and Kim, TY and Kim, KH and Sung, GY and Kim, BH and Park, SJ and Cho, KS and Shin, JH and Lee, JK and Nastasi, M (2005) Effect of amorphous Si quantum-dot size on 1.54 μm luminescence of Er. Journal of the Electrochemical Society, 152 (6). ISSN 0013-4651

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Abstract

The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, more Er ions were located near one dot due to its large surface area and more Er ions interacted with other ones. This Er-Er interaction caused a weak photoluminescence intensity, despite the increase in the effective excitation cross section. The critical dot size needed to take advantage of the positive effect on Er luminescence is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er. © 2005 The Electrochemical Society. All rights reserved.


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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Park, NM
Kim, TY
Kim, KH
Sung, GY
Kim, BH
Park, SJ
Cho, KS
Shin, JH
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Nastasi, M
Centers: Other Centers, Institutes, or Units > Petersen Institute of NanoScience and Engineering
Date: 2 August 2005
Date Type: Publication
Journal or Publication Title: Journal of the Electrochemical Society
Volume: 152
Number: 6
DOI or Unique Handle: 10.1149/1.1901662
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0013-4651
Date Deposited: 19 Nov 2014 20:16
Last Modified: 05 Feb 2019 19:55
URI: http://d-scholarship.pitt.edu/id/eprint/23556

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