Constructing Reliable Super Dense Phase Change Memory under Write Disturbance

Wang, Rujia (2015) Constructing Reliable Super Dense Phase Change Memory under Write Disturbance. Master's Thesis, University of Pittsburgh. (Unpublished)

Preview

PDF Primary Text Download (651kB)

Abstract

Phase Change Memory (PCM) has better scalability and smaller cell size comparing to DRAM. However, further scaling PCM cell in deep sub-micron regime results in significant thermal based write disturbance. Naively allocating large inter-cell space increases cell size from ideal 4F^2 to 12F^2. While a recent work mitigates write disturbance along word-lines through disturbance resilient data encoding, which can shrink PCM cell size from 12F^2 to 8F^2, it is ineffective for write disturbance along bit-lines, which is more severe due to widely adopted uTrench structure in constructing PCM cell arrays.

In this thesis, we propose SD-PCM, an architecture to achieve reliable write operations in Super Dense PCM. In particular, we focus on mitigating write disturbance along bit-lines such that we can construct super dense PCM chips with 4F^2 cell size, i.e., the minimal for diode-switch based PCM. Based on simple verification-n-correction (VnC), we propose LazyCorrection and PreRead to effectively reduce VnC overhead and minimize cascading verification during write. We further propose (n:m)-Alloc for achieving good tradeoff between VnC overhead minimization and memory capacity loss. Our experimental results show that, comparing to a write disturbance-free low density PCM, SD-PCM achieves 80% capacity improvement in cell arrays while incurring around 0-10% performance degradation when using different (n:m) allocators.

---

Share

Citation/Export:	Select format... Citation - Text Citation - HTML Endnote BibTex Dublin Core OpenURL MARC (ISO 2709) METS MODS EP3 XML Reference Manager Refer
Social Networking:	Share |

---

Details

Item Type:	University of Pittsburgh ETD
Status:	Unpublished
Creators/Authors:	Creators Email Pitt Username ORCID Wang, Rujia ruw16@pitt.edu RUW16
ETD Committee:	Title Member Email Address Pitt Username ORCID Committee Chair Yang, Jun juy9@pitt.edu JUY9 Committee CoChair Zhang, Youtao zhangyt@cs.pitt.edu YOUTAO Committee Member Levitan, Steven P levitan@pitt.edu LEVITAN Committee Member Mohanram, Kartik kmram@pitt.edu KMRAM
Date:	8 June 2015
Date Type:	Publication
Defense Date:	26 February 2015
Approval Date:	8 June 2015
Submission Date:	21 March 2015
Access Restriction:	No restriction; Release the ETD for access worldwide immediately.
Number of Pages:	45
Institution:	University of Pittsburgh
Schools and Programs:	Swanson School of Engineering > Electrical and Computer Engineering
Degree:	MSEE - Master of Science in Electrical Engineering
Thesis Type:	Master's Thesis
Refereed:	Yes
Uncontrolled Keywords:	Phase Change Memory, Write Disturbance
Date Deposited:	08 Jun 2015 17:45
Last Modified:	15 Nov 2016 14:26
URI:	http://d-scholarship.pitt.edu/id/eprint/24000

---

Metrics

Monthly Views for the past 3 years

Plum Analytics

---

Actions (login required)

View Item