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Optoelectronic Properties of Graphene/Oxide/Semiconductor Structure with Nano-Channels

Liu, Siyang (2016) Optoelectronic Properties of Graphene/Oxide/Semiconductor Structure with Nano-Channels. Master's Thesis, University of Pittsburgh. (Unpublished)

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Metal-oxide-semiconductor (MOS) structure is a basic building block of silicon CMOS electronics. The silicon surface, when passivated by thermally grown oxide, can harbor a good quality two-dimensional electronic system (2DES). We have developed a graphene/oxide/nano-channel-etched Si (GOS) capacitor structure and investigated the photodetection properties. In this structure photogenerated carriers are extracted through a thin oxide layer via tunneling process and a monolayer graphene is used as a transparent conducting electrode. Nano-channels of high aspect ratio (length to diameter ratio of ~100 with diameter < 100nm) are formed in Si using a non-lithographic electrochemical process, metal-assisted-chemical-etching (MACE). We introduced a thin oxide layer in the MACE process for controlled formation of nano-channels. The nano-channel-etched Si demonstrates an antireflection effect. The current-versus-voltage (I-V) characteristic of GOS structure is measured both in dark and under illumination at 633 nm wavelength. Tunneling of carriers through the thin (2-4nm) oxide layer as well as ballistic transport through nano-channels is discussed as underlying mechanisms of carrier transport. A photo responsivity of 0.33 A/W and internal quantum efficiency of 84 % is observed on graphene/SiO2/nano-channeled n-Si structure.


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Item Type: University of Pittsburgh ETD
Status: Unpublished
CreatorsEmailPitt UsernameORCID
Liu, Siyangsil26@pitt.eduSIL260000-0001-8892-0394
ETD Committee:
TitleMemberEmail AddressPitt UsernameORCID
Committee ChairStanchina, Williamwes25@pitt.eduWES25
Committee MemberLi, Guangyonggul6@pitt.eduGUL6
Thesis AdvisorKim, Hong Koohkk@pitt.eduHKK
Date: 25 January 2016
Date Type: Publication
Defense Date: 27 April 2015
Approval Date: 25 January 2016
Submission Date: 28 April 2015
Access Restriction: 2 year -- Restrict access to University of Pittsburgh for a period of 2 years.
Number of Pages: 87
Institution: University of Pittsburgh
Schools and Programs: Swanson School of Engineering > Electrical Engineering
Degree: MS - Master of Science
Thesis Type: Master's Thesis
Refereed: Yes
Uncontrolled Keywords: Graphene/Oxide/Semiconductor;Optoelectronic properties;Nano-channels;MACE;
Date Deposited: 25 Jan 2016 15:48
Last Modified: 25 Jan 2018 06:15


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