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A Novel Self-Reference Sensing Scheme for MLC MRAM

Li, Zheng (2017) A Novel Self-Reference Sensing Scheme for MLC MRAM. Master's Thesis, University of Pittsburgh. (Unpublished)

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Magnetic random access memory (MRAM) is a promising nonvolatile memory technology targeted on on-chip or embedded applications. Storage density is one of the major design concerns of MRAM. In recent years, many researches have been performed to improve the storage density and enhance the scalability of MRAM, such as shrinking the size and switching energy of magnetic tunneling junction (MTJ) devices. Recently, a tri-bit cell (TBC) structure was proposed to enlarge the storage density of MRAM. The typical sensing scheme for TBC sensing is suffering from large sensing latency and limited margin. In this work, a new self-reference sensing scheme for the TBC MRAM cell was proposed based on its unique property referred as resistance levels ordering. Simulation results show that compared to conventional design, the proposed self-reference scheme achieves on average 61% saving on sensing latency while also demonstrating significantly enhanced tolerance to device parametric variations.


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Item Type: University of Pittsburgh ETD
Status: Unpublished
CreatorsEmailPitt UsernameORCID
Li, Zhengzhl85@pitt.eduzhl85
ETD Committee:
TitleMemberEmail AddressPitt UsernameORCID
Thesis AdvisorLi,
Committee MemberChen,
Committee MemberDickerson,
Date: 13 June 2017
Date Type: Publication
Defense Date: 11 November 2016
Approval Date: 13 June 2017
Submission Date: 18 March 2017
Access Restriction: No restriction; Release the ETD for access worldwide immediately.
Number of Pages: 43
Institution: University of Pittsburgh
Schools and Programs: Swanson School of Engineering > Electrical and Computer Engineering
Degree: MS - Master of Science
Thesis Type: Master's Thesis
Refereed: Yes
Uncontrolled Keywords: Non-volatile Memory, MRAM, MTJ, Sensing Circuit
Date Deposited: 13 Jun 2017 15:36
Last Modified: 13 Jun 2017 15:36

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