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FeFET Based Nonvolatile TCAM and DRAM Development

Bayram, Ismail (2018) FeFET Based Nonvolatile TCAM and DRAM Development. Doctoral Dissertation, University of Pittsburgh. (Unpublished)

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Ferroelectric Field Effect Transistor (FeFET) is a promising nonvolatile device which provides high integration density, fast programming speed, and excellent CMOS compatibility. In general, the non-volatility of FeFET is impacted by its physical structure and there is a trade-off between data retention time and device endurance. To improve the cell endurance, for example, the ferroelectric layer of FeFET needs to be programmed to a low polarization level, leading to a short retention time. In ferroelectric DRAM (FeDRAM) design, degradation in FeFET retention time and write-read disturbance requires the FeDRAM cells to be periodically refreshed in order to prevent data loss. In this work, I propose a novel adaptive refreshing and read voltage control scheme to minimize the energy overheads associated with FeDRAM refreshing while still achieve high cell access reliability. In addition to the DRAM application FeFET based TCAM memory is also studied. TCAM (ternary content addressable memory) is a special memory type that can compare input search data with stored data, and return location (sometime, the associated content) of matched data. TCAM is widely used in microprocessor designs as well as communication chip, e.g., IP-routing. Following technology advances of emerging nonvolatile memories (eNVM), applying eNVM to TCAM designs becomes attractive to achieve high density and low standby power. In this work, I examined the applications of three promising eNVM tech-nologies, i.e., magnetic tunneling junction (MTJ), memristor, and ferroelectric memory field effect transistor (FeMFET), in the design of nonvolatile TCAM cells. All these technologies can achieve close-to-zero standby power though each of them has very different pros and cons.


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Item Type: University of Pittsburgh ETD
Status: Unpublished
CreatorsEmailPitt UsernameORCID
Bayram, Ismailisb11@pitt.eduisb11
ETD Committee:
TitleMemberEmail AddressPitt UsernameORCID
Committee ChairChen, Yiranyic52@pitt.eduyic52
Committee MemberMao, Zhi-Hongmaozh@engr.pitt.eduzhm4
Committee MemberAkcakaya, Muratakcakaya@pitt.eduakcakaya
Committee MemberSejdic, Ervinesejdic@pitt.eduesejdic
Committee MemberSun, Minguidrsun@pitt.edudrsun
Date: 17 April 2018
Date Type: Publication
Defense Date: 5 June 2017
Approval Date: 17 April 2018
Submission Date: 15 November 2017
Access Restriction: 1 year -- Restrict access to University of Pittsburgh for a period of 1 year.
Number of Pages: 75
Institution: University of Pittsburgh
Schools and Programs: Swanson School of Engineering > Electrical and Computer Engineering
Degree: PhD - Doctor of Philosophy
Thesis Type: Doctoral Dissertation
Refereed: Yes
Uncontrolled Keywords: TCAM, DRAM, Nomvolatile, FeFET, STT-RAM, Memeristor, Memory
Date Deposited: 17 Apr 2019 05:00
Last Modified: 17 Apr 2019 05:15


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