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Radiation-Tolerant High-Power Density Gallium Nitride Point-of-Load Converters

Martin, Noah Levi (2022) Radiation-Tolerant High-Power Density Gallium Nitride Point-of-Load Converters. Master's Thesis, University of Pittsburgh. (Unpublished)

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Abstract

Modern space missions push the limits of on-board power processing making high current output, power dense converters increasingly more crucial for mission success. Increasing power density and efficiency while reducing the converter size, weight, thermal dissipation, and overall cost has become increasingly more difficult with the radiation-hardened converters that are available. Designers are forced to operate at slower switching speeds in comparison to their commercial counterparts. This paper will present the design, development, and testing of three synchronous buck converter drop-on modules which utilize the EPC 2030, 2218, and GaN Systems GS61008T Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT), inductor DC resistance current sensing, thermal dissipation techniques, and an Analog Devices LTC7800 controller to ensure the success of future small-satellite applications.


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Details

Item Type: University of Pittsburgh ETD
Status: Unpublished
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Martin, Noah Levinlmartin1314@gmail.comnlm54@pitt.edu0000-0002-0048-459X
ETD Committee:
TitleMemberEmail AddressPitt UsernameORCID
Committee ChairGrainger, BMbmg10@pitt.eduBMG100000-0001-5251-8766
Committee MemberGeorge, Alanalan.george@pitt.edualan.george0000-0001-9665-2879
Committee MemberKwasinski, Alexisakwasins@pitt.eduakwasins0000-0003-0672-5937
Date: 16 January 2022
Date Type: Publication
Defense Date: 1 November 2021
Approval Date: 16 January 2022
Submission Date: 25 October 2021
Access Restriction: No restriction; Release the ETD for access worldwide immediately.
Number of Pages: 60
Institution: University of Pittsburgh
Schools and Programs: Swanson School of Engineering > Electrical and Computer Engineering
Degree: MS - Master of Science
Thesis Type: Master's Thesis
Refereed: Yes
Uncontrolled Keywords: Point-of-Load, Gallium Nitride, High Electron Mobility Transistor, radiation-hardened, Commercial off-the-shelf, synchronous buck converter
Date Deposited: 16 Jan 2022 17:16
Last Modified: 16 Jan 2022 17:16
URI: http://d-scholarship.pitt.edu/id/eprint/41882

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  • Radiation-Tolerant High-Power Density Gallium Nitride Point-of-Load Converters. (deposited 16 Jan 2022 17:16) [Currently Displayed]

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