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ATOMIC LUMINESCENCE INDUCED BY COULOMB EXPLOSION IN A SILICON METAL-OXIDE-SEMICONDUCTOR STRUCTURE

Yoon, Sung Jun (2008) ATOMIC LUMINESCENCE INDUCED BY COULOMB EXPLOSION IN A SILICON METAL-OXIDE-SEMICONDUCTOR STRUCTURE. Master's Thesis, University of Pittsburgh. (Unpublished)

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Abstract

The Coulomb fragmentation phenomenon has been known to occur in matter at various different length scales, such as nuclei and atomic or molecular clusters, and microscopic droplets. In many cases, the Coulomb explosion is triggered by sudden ionization with high-intensity (>10²14 W/cm¹2) femto-second laser pulses. At this intensity level, the valence electrons are quickly ripped off and the ionized metal clusters fragment before thermalization occurs. In this thesis, we report Coulomb explosion of Ag atoms induced by electron impact ionization in a Si metal-oxide-semiconductor (MOS) structure (Ag/SiO2/Si). Under positive voltage pulses applied to the Ag gate, kinetic electrons are injected onto the gate through leakage channels formed in oxide and impact-ionize the metal atoms at the gate/dielectric interface. When the Coulomb repulsion among the ions becomes stronger than the binding force of metal atoms, the ions accumulated at the interface explode, atomizing the metal and also adjacent dielectrics. This explosive fragmentation results in atomic luminescence from neutral silver at 328 nm, 338 nm, 521 nm, 547 nm, 769 nm, and 827 nm. The mechanisms of oxide breakdown, localized injection of kinetic electrons, and atomization/luminescence are discussed.


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Details

Item Type: University of Pittsburgh ETD
Status: Unpublished
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Yoon, Sung Junsungjunyoon@gmail.com
ETD Committee:
TitleMemberEmail AddressPitt UsernameORCID
Committee ChairKim, Hong Koohkk@pitt.eduHKK
Committee MemberLi, Guangyonggli@engr.pitt.eduGUL6
Committee MemberFalk, Joelfalk@ee.pitt.eduFALK
Committee MemberEl Nokali, Mahmoudelnokali@ee.pitt.eduMEN
Date: 22 September 2008
Date Type: Completion
Defense Date: 16 June 2008
Approval Date: 22 September 2008
Submission Date: 17 June 2008
Access Restriction: 5 year -- Restrict access to University of Pittsburgh for a period of 5 years.
Institution: University of Pittsburgh
Schools and Programs: Swanson School of Engineering > Electrical Engineering
Degree: MSEE - Master of Science in Electrical Engineering
Thesis Type: Master's Thesis
Refereed: Yes
Uncontrolled Keywords: deformation; I-V; oxide growth; Spectrum; thin film
Other ID: http://etd.library.pitt.edu/ETD/available/etd-06172008-105142/, etd-06172008-105142
Date Deposited: 10 Nov 2011 19:47
Last Modified: 15 Nov 2016 13:44
URI: http://d-scholarship.pitt.edu/id/eprint/8130

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