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QUANTUM-DOT ORGANIC LIGHT-EMITTING DIODES ON SILICON SUBSTRATE

EMON, DAUD HASAN (2018) QUANTUM-DOT ORGANIC LIGHT-EMITTING DIODES ON SILICON SUBSTRATE. Doctoral Dissertation, University of Pittsburgh. (Unpublished)

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Abstract

Utilization of quantum dots (QDs) as luminophores in organic light emitting diodes (OLEDs) has proven to be an effective way to produce a highly-efficient and cost-effective LED structure. Integrating a light emitting function on a silicon platform is expected to complement Si electronics advancing Si photonics. As an efficient means of driving electrons and holes into a QD layer of OLED structure formed on Si substrate, we have developed a novel injection method that exploits two-dimensional electron gas (2DEG) available at Si/SiO2 interface. By employing a stacked p-Si/SiO2//SiO2/n-Si structure having a cleaved edge on one side we demonstrated that Coulombic repulsion at the cleaved edge enables low-voltage emission of 2DEG. To utilize this low-voltage injection phenomenon, we fabricated OLED on an n-Si substrate using Si as a cathode and the inorganic quantum dots as a luminophore. In this device structure the junction area is defined by a lithographically patterned oxide layer on Si substrate and is designed to allow a wide range of scalability of lateral dimension down to a nanometer range. By varying the junction dimensions and geometry, the electron injection process is found to occur predominantly at junction periphery, not area, resulting in low turn-on voltage (~1-2V). Moreover, to utilize the ballistic injection of 2DEG through a void channel, we fabricated an OLED structure stacked on a 2D material (h-BN monolayer) suspended on a nano-hole-etched SiO2/Si substrate. The 2DEG injection produces one-dimensional emission of light along junction edges. This edge injection/emission QD-OLED structure, when scaled down to a sub-10nm range, offers an interesting approach to developing single quantum-dot light sources for quantum information processing.
QUANTUM-DOT ORGANIC LIGHT-EMITTING DIODES ON Si SUBSTRATE
Daud Hasan Emon
University of Pittsburgh, 2017

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Details

Item Type: University of Pittsburgh ETD
Status: Unpublished
Creators/Authors:
CreatorsEmailPitt UsernameORCID
EMON, DAUD HASANdae42@pitt.edudae42
ETD Committee:
TitleMemberEmail AddressPitt UsernameORCID
Committee ChairKim, Hong Koohkk@pitt.edu
Committee MemberEl Nokali, Mahmoudmen@pitt.edu
Committee MemberLEE, Jung-Kunjul37@pitt.edu
Committee MemberLanger, Dietrich Wdwl@pitt.edu
Committee MemberStanchina, William Ewes25@pitt.edu
Date: 17 April 2018
Date Type: Publication
Defense Date: 7 September 2017
Approval Date: 17 April 2018
Submission Date: 8 September 2017
Access Restriction: 5 year -- Restrict access to University of Pittsburgh for a period of 5 years.
Number of Pages: 168
Institution: University of Pittsburgh
Schools and Programs: Swanson School of Engineering > Electrical and Computer Engineering
Degree: PhD - Doctor of Philosophy
Thesis Type: Doctoral Dissertation
Refereed: Yes
Uncontrolled Keywords: Quantum Dot OLED, Si OLED, Single Photon Source, 2DEG injection, MOS Hysteresis Hump, Semiconductor Oxide Semiconductor, Suspended LED
Date Deposited: 17 Apr 2019 05:00
Last Modified: 17 Apr 2023 05:15
URI: http://d-scholarship.pitt.edu/id/eprint/33187

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