Link to the University of Pittsburgh Homepage
Link to the University Library System Homepage Link to the Contact Us Form

DEVELOPMENT OF OPTICAL TAP FOR PLANAR LIGHTWAVE CIRCUITS AND INTRA-CHIP OPTICAL INTERCONNECT USING ION IMPLANTATION

Chen, Zhuo (2007) DEVELOPMENT OF OPTICAL TAP FOR PLANAR LIGHTWAVE CIRCUITS AND INTRA-CHIP OPTICAL INTERCONNECT USING ION IMPLANTATION. Master's Thesis, University of Pittsburgh. (Unpublished)

[img]
Preview
PDF
Primary Text

Download (2MB) | Preview

Abstract

As silicon CMOS circuit technology is scaled above the GHz range, semiconductor industries face increasingly difficult challenges in implementing high speed metal interconnects. Metal trances are limited in density-speed performance due to the skin effect, electrical conductivity, and cross talk. Optical based interconnects have much higher available bandwidth by virtue of the extremely high carrier frequencies of optical signals (>100 THz). As more and more optical lightwave circuits and intra-chip optical interconnects are fabricated, a compact, low loss optical tapping technology is essential to incorporate optical interconnects into mainstream CMOS processes. In this thesis, a new optical tapping device, which is based on optical refractive index variation induced by ion-implantation, was studied for both applications of intra-chip optical interconnect and optical power monitoring for planar lightwave circuits.Beam propagation simulation was used to study the guided waveguide properties of ion-implanted optical taps. The length and tapping ratio of optical tap was optimized as functions of implanted ion energy and concentration for 1550nm guided light. The behavior of ion-implanted optical taps can be explained by waveguide coupling between ion-implanted waveguides and as-fabricated waveguides. Ion implantation experiments have also been performed on silica-on-silicon planar lightwave circuit devices using hydrogen ions. Ion concentration up to 5×1016 ion/cm3 were used in experiments with implantation energy from 1.2 MeV to 1.35 MeV. Transmission experimental results are qualitatively consistent with the simulation results. Both simulation and experimental results proves the feasibility of ion-implantation to produce effective and CMOS compatible optical tapping devices for wide applications in chip-level optical interconnect and planar lightwave circuits.


Share

Citation/Export:
Social Networking:
Share |

Details

Item Type: University of Pittsburgh ETD
Status: Unpublished
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Chen, Zhuoyangtzer@gmail.com
ETD Committee:
TitleMemberEmail AddressPitt UsernameORCID
Committee ChairChen, Kevinkchen@engr.pitt.eduPEC9
Committee MemberFalk, JoelFalk@engr.pitt.eduFALK
Committee MemberYun, Minheeyunmh@engr.pitt.eduMIY16
Date: 31 January 2007
Date Type: Completion
Defense Date: 20 November 2006
Approval Date: 31 January 2007
Submission Date: 9 November 2006
Access Restriction: No restriction; Release the ETD for access worldwide immediately.
Institution: University of Pittsburgh
Schools and Programs: Swanson School of Engineering > Electrical Engineering
Degree: MSEE - Master of Science in Electrical Engineering
Thesis Type: Master's Thesis
Refereed: Yes
Uncontrolled Keywords: ion implantation; optical interconnect; optical tap; planner lightwave circuits
Other ID: http://etd.library.pitt.edu/ETD/available/etd-11092006-213341/, etd-11092006-213341
Date Deposited: 10 Nov 2011 20:04
Last Modified: 15 Nov 2016 13:51
URI: http://d-scholarship.pitt.edu/id/eprint/9609

Metrics

Monthly Views for the past 3 years

Plum Analytics


Actions (login required)

View Item View Item