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Photoluminescence and electrical properties of epitaxial Al-doped ZnO transparent conducting thin films

Noh, JH and Cho, IS and Lee, S and Cho, CM and Han, HS and An, JS and Kwak, CH and Kim, JY and Jung, HS and Lee, JK and Hong, KS (2009) Photoluminescence and electrical properties of epitaxial Al-doped ZnO transparent conducting thin films. Physica Status Solidi (A) Applications and Materials Science, 206 (9). 2133 - 2138. ISSN 1862-6300

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Abstract

Epitaxial ZnO and Al-doped ZnO (AZO) thin films were grown on (0001)-sapphire substrates using pulsed laser deposition. The photoluminescence spectrum of the highly conductive (1.3×10 S cm ), as-grown AZO shows a poor near band edge (NBE) emission (3.30 eV) and no deep level emission at room temperature. In addition, the peak (3.386 eV) for the free excitons of AZO showed thermal quenching behavior with two activation energies (38.2 and 10.0 meV). The poor NBE emission is attributed to the nonradiative recombination center created by Al doping. Highly conductive (6.0×10 S cm ) and intense NBE emitting AZO films could be achieved by the reduction of the nonradiative recombination centers through hydrogen annealing. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 3 -1 2 -1


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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Noh, JH
Cho, IS
Lee, S
Cho, CM
Han, HS
An, JS
Kwak, CH
Kim, JY
Jung, HS
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Hong, KS
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 1 September 2009
Date Type: Publication
Journal or Publication Title: Physica Status Solidi (A) Applications and Materials Science
Volume: 206
Number: 9
Page Range: 2133 - 2138
DOI or Unique Handle: 10.1002/pssa.200881790
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 1862-6300
Date Deposited: 27 Oct 2014 17:44
Last Modified: 30 Mar 2021 13:56
URI: http://d-scholarship.pitt.edu/id/eprint/23415

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