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Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy

Shao, L and Lee, JK and Wang, YQ and Nastasi, M and Thompson, PE and Theodore, ND and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2006) Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy. Journal of Applied Physics, 99 (12). ISSN 0021-8979

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Abstract

We have investigated hydrogen diffusion in hydrogenated 〈100〉 Si/Si homoepitaxial structures, which were grown by molecular beam epitaxy at various temperatures. The substrate growth temperature can significantly affect the H diffusion behavior, with higher growth temperatures resulting in deeper H diffusion. For the Si/Si structure grown at the highest temperature of 800°C, H trapping occurs at the epitaxial Si/Si substrate interface, which results in the formation of (100) oriented microcracks at the interface. The mechanism of H trapping and the potential application of these findings for the development of a method of transferring ultrathin Si layers are discussed. © 2006 American Institute of Physics.

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Details

Item Type: Article
Status: Published
Creators/Authors:
CreatorsEmailPitt UsernameORCID
Shao, L
Lee, JKjul37@pitt.eduJUL370000-0002-7778-7679
Wang, YQ
Nastasi, M
Thompson, PE
Theodore, ND
Alford, TL
Mayer, JW
Chen, P
Lau, SS
Centers: Other Centers, Institutes, Offices, or Units > Petersen Institute of NanoScience and Engineering
Date: 11 July 2006
Date Type: Publication
Journal or Publication Title: Journal of Applied Physics
Volume: 99
Number: 12
DOI or Unique Handle: 10.1063/1.2204330
Schools and Programs: Swanson School of Engineering > Mechanical Engineering and Materials Science
Refereed: Yes
ISSN: 0021-8979
Date Deposited: 12 Nov 2014 17:28
Last Modified: 05 Feb 2019 19:55
URI: http://d-scholarship.pitt.edu/id/eprint/23494

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