Liu, Siyang
(2016)
Optoelectronic Properties of Graphene/Oxide/Semiconductor Structure with Nano-Channels.
Master's Thesis, University of Pittsburgh.
(Unpublished)
Abstract
Metal-oxide-semiconductor (MOS) structure is a basic building block of silicon CMOS electronics. The silicon surface, when passivated by thermally grown oxide, can harbor a good quality two-dimensional electronic system (2DES). We have developed a graphene/oxide/nano-channel-etched Si (GOS) capacitor structure and investigated the photodetection properties. In this structure photogenerated carriers are extracted through a thin oxide layer via tunneling process and a monolayer graphene is used as a transparent conducting electrode. Nano-channels of high aspect ratio (length to diameter ratio of ~100 with diameter < 100nm) are formed in Si using a non-lithographic electrochemical process, metal-assisted-chemical-etching (MACE). We introduced a thin oxide layer in the MACE process for controlled formation of nano-channels. The nano-channel-etched Si demonstrates an antireflection effect. The current-versus-voltage (I-V) characteristic of GOS structure is measured both in dark and under illumination at 633 nm wavelength. Tunneling of carriers through the thin (2-4nm) oxide layer as well as ballistic transport through nano-channels is discussed as underlying mechanisms of carrier transport. A photo responsivity of 0.33 A/W and internal quantum efficiency of 84 % is observed on graphene/SiO2/nano-channeled n-Si structure.
Share
| Citation/Export: |
|
| Social Networking: |
|
Details
| Item Type: |
University of Pittsburgh ETD
|
| Status: |
Unpublished |
| Creators/Authors: |
|
| ETD Committee: |
|
| Date: |
25 January 2016 |
| Date Type: |
Publication |
| Defense Date: |
27 April 2015 |
| Approval Date: |
25 January 2016 |
| Submission Date: |
28 April 2015 |
| Access Restriction: |
2 year -- Restrict access to University of Pittsburgh for a period of 2 years. |
| Number of Pages: |
87 |
| Institution: |
University of Pittsburgh |
| Schools and Programs: |
Swanson School of Engineering > Electrical Engineering |
| Degree: |
MS - Master of Science |
| Thesis Type: |
Master's Thesis |
| Refereed: |
Yes |
| Uncontrolled Keywords: |
Graphene/Oxide/Semiconductor;Optoelectronic properties;Nano-channels;MACE; |
| Date Deposited: |
25 Jan 2016 15:48 |
| Last Modified: |
25 Jan 2018 06:15 |
| URI: |
http://d-scholarship.pitt.edu/id/eprint/25075 |
Metrics
Monthly Views for the past 3 years
Plum Analytics
Actions (login required)
 |
View Item |
![[img]](https://d-scholarship.pitt.edu/style/images/fileicons/application_pdf.png)
![[feed]](/images/feed-icon-32x32.png){kind=icon}