Li, Zheng
(2017)
A Novel Self-Reference Sensing Scheme for MLC MRAM.
Master's Thesis, University of Pittsburgh.
(Unpublished)
This is the latest version of this item.
Abstract
Magnetic random access memory (MRAM) is a promising nonvolatile memory technology targeted on on-chip or embedded applications. Storage density is one of the major design concerns of MRAM. In recent years, many researches have been performed to improve the storage density and enhance the scalability of MRAM, such as shrinking the size and switching energy of magnetic tunneling junction (MTJ) devices. Recently, a tri-bit cell (TBC) structure was proposed to enlarge the storage density of MRAM. The typical sensing scheme for TBC sensing is suffering from large sensing latency and limited margin. In this work, a new self-reference sensing scheme for the TBC MRAM cell was proposed based on its unique property referred as resistance levels ordering. Simulation results show that compared to conventional design, the proposed self-reference scheme achieves on average 61% saving on sensing latency while also demonstrating significantly enhanced tolerance to device parametric variations.
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Details
Item Type: |
University of Pittsburgh ETD
|
Status: |
Unpublished |
Creators/Authors: |
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ETD Committee: |
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Date: |
13 June 2017 |
Date Type: |
Publication |
Defense Date: |
11 November 2016 |
Approval Date: |
13 June 2017 |
Submission Date: |
18 March 2017 |
Access Restriction: |
No restriction; Release the ETD for access worldwide immediately. |
Number of Pages: |
43 |
Institution: |
University of Pittsburgh |
Schools and Programs: |
Swanson School of Engineering > Electrical and Computer Engineering |
Degree: |
MS - Master of Science |
Thesis Type: |
Master's Thesis |
Refereed: |
Yes |
Uncontrolled Keywords: |
Non-volatile Memory, MRAM, MTJ, Sensing Circuit |
Date Deposited: |
13 Jun 2017 15:36 |
Last Modified: |
13 Jun 2017 15:36 |
URI: |
http://d-scholarship.pitt.edu/id/eprint/30998 |
Available Versions of this Item
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A Novel Self-Reference Sensing Scheme for MLC MRAM. (deposited 13 Jun 2017 15:36)
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