Wang, Peiyuan
(2012)
Design and Robustness Analysis on Non-volatile Storage and Logic Circuit.
Master's Thesis, University of Pittsburgh.
(Unpublished)
Abstract
By combining the flexibility of MOS logic and the non-volatility of spintronic devices, spin-MOS logic and storage circuitry offer a promising approach to implement highly integrated, power-efficient, and nonvolatile computing and storage systems. Besides the persistent errors due to process variations, however, the functional correctness of Spin-MOS circuitry suffers from additional non-persistent errors that are incurred by the randomness of spintronic device operations, i.e., thermal fluctuations. This work quantitatively investigates the impact of thermal fluctuations on the operations of two typical Spin-MOS circuitry: one transistor and one magnetic tunnel junction (1T1J) spin-transfer torque random access memory (STT-RAM) cell and a nonvolatile latch design. A new nonvolatile latch design is proposed based on magnetic tunneling junction (MTJ) devices. In the standby mode, the latched data can be retained in the MTJs without consuming any power. Two types of operation errors can occur, namely, persistent and non-persistent errors. These are quantitatively analyzed by including models for process variations and thermal fluctuations during the read and write operations. A mixture importance sampling methodology is applied to enable yield-driven design and extend its application beyond memories to peripheral circuits and logic blocks. Several possible design techniques to reduce thermal induced non-persistent error rate are also discussed.
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Details
Item Type: |
University of Pittsburgh ETD
|
Status: |
Unpublished |
Creators/Authors: |
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ETD Committee: |
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Date: |
2 February 2012 |
Date Type: |
Publication |
Defense Date: |
18 October 2011 |
Approval Date: |
2 February 2012 |
Submission Date: |
3 November 2011 |
Access Restriction: |
No restriction; Release the ETD for access worldwide immediately. |
Number of Pages: |
64 |
Institution: |
University of Pittsburgh |
Schools and Programs: |
Swanson School of Engineering > Electrical Engineering |
Degree: |
MS - Master of Science |
Thesis Type: |
Master's Thesis |
Refereed: |
Yes |
Uncontrolled Keywords: |
non-persistent, process variation, spin-MOS, STTRAM, non-volatile |
Date Deposited: |
02 Feb 2012 14:16 |
Last Modified: |
15 Nov 2016 13:35 |
URI: |
http://d-scholarship.pitt.edu/id/eprint/6199 |
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