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Electrical Properties of Junction Structure in Silicon Devices

Guo, Haiming (2018) Electrical Properties of Junction Structure in Silicon Devices. Master's Thesis, University of Pittsburgh. (Unpublished)

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Semiconductor devices commonly employ junction structures that control carrier transport in various different mechanisms. The resulting junction properties are accessed via Ohmic contacts, and the transport process completes through this contact. It is no exaggeration to say that overall device characteristics are governed by junction properties. In this thesis we have investigated two different aspects of p-n junction structures in silicon devices and their effects on device performances: Ohmic metallization and junction formation. Specifically, we have successfully developed 1) low-loss Ohmic metallization on Si n+-p junction solar cells and 2) a spin-on dopant diffusion process for metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication. In Si solar cells, junction/contact properties can be characterized by shunt and series resistance. By employing silver/graphene paste for Ohmic metallization on nanostructured emitter surface (n+-doped) we have investigated the effects of series/shunt resistances on solar cell efficiencies. In a MOSFET structure, source and drain regions are doped p-n junctions and are commonly formed by gas-phase diffusion of dopant sources. Spin-on dopant (SOD) is an alternative method of forming diffused junctions, offering certain advantages (such as safety and process simplicity). By employing phosphorous SOD we have formed n+-p junctions on p-Si substrate for source and drain regions. The resulting junction properties were characterized by transfer-length method(TLM). By fabricating n-MOS structure we also demonstrated excellent FET characteristics as measured by device transconductance and carrier mobility.


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Item Type: University of Pittsburgh ETD
Status: Unpublished
CreatorsEmailPitt UsernameORCID
Guo, Haiminghag57@pitt.eduhag57
ETD Committee:
TitleMemberEmail AddressPitt UsernameORCID
Committee ChairKim, Hong
Committee MemberStanchina, William
Committee MemberXiong,
Date: 11 June 2018
Date Type: Publication
Defense Date: 6 April 2018
Approval Date: 11 June 2018
Submission Date: 9 April 2018
Access Restriction: No restriction; Release the ETD for access worldwide immediately.
Number of Pages: 52
Institution: University of Pittsburgh
Schools and Programs: Swanson School of Engineering > Electrical and Computer Engineering
Degree: MS - Master of Science
Thesis Type: Master's Thesis
Refereed: Yes
Uncontrolled Keywords: nanopillar; spin-on dopant
Date Deposited: 11 Jun 2018 17:34
Last Modified: 11 Jun 2018 17:34


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